CN2767978Y - Minitype temperature sensor with nanometer scale - Google Patents
Minitype temperature sensor with nanometer scale Download PDFInfo
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- CN2767978Y CN2767978Y CNU2005200233525U CN200520023352U CN2767978Y CN 2767978 Y CN2767978 Y CN 2767978Y CN U2005200233525 U CNU2005200233525 U CN U2005200233525U CN 200520023352 U CN200520023352 U CN 200520023352U CN 2767978 Y CN2767978 Y CN 2767978Y
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Abstract
本实用新型公开了一种纳米尺度的微型温度传感器，涉及传感器领域中的一种测量温度的传感器器件。它由硅腔体、下层氮化硅膜层、上层氮化硅膜层、粘附层、温敏电阻层、导电层、悬臂梁、二氧化硅膜层构成。它采用微机械加工工艺制作温敏电阻层作为测量温度的敏感元件，周围环境温度的变化引起其阻值的变化，达到测量温度，作为传感器的目的。本实用新型还具有体积极小、温度测量范围极宽、结构简单、重量轻、热容量小、响应速度快、线性度好、功耗低、可靠性高、一致性好、成本低等特点。特别适用于微流体传感器等要求体积较小的场合作为精确温度测量及IC芯片、传感器芯片等嵌入式在片温度测量的传感器装置。
The utility model discloses a nanoscale miniature temperature sensor, which relates to a sensor device for measuring temperature in the field of sensors. It consists of a silicon cavity, a lower silicon nitride film layer, an upper silicon nitride film layer, an adhesion layer, a temperature-sensitive resistance layer, a conductive layer, a cantilever beam, and a silicon dioxide film layer. It adopts micromachining technology to make temperature-sensitive resistance layer as a sensitive element for measuring temperature. The change of ambient temperature causes the change of its resistance value to achieve the purpose of measuring temperature and serving as a sensor. The utility model also has the characteristics of extremely small size, extremely wide temperature measurement range, simple structure, light weight, small heat capacity, fast response speed, good linearity, low power consumption, high reliability, good consistency, and low cost. It is especially suitable for microfluidic sensors and other occasions requiring small volume as a sensor device for precise temperature measurement and embedded on-chip temperature measurement of IC chips and sensor chips.
Description
Technical field
The utility model relates to the micro temperature sensor of a kind of nanoscale in the sensor field, is specially adapted to microfluid sensor etc. and wants the less occasion of cube embedded at the thermometric sensor device of sheet as accurate temperature measurement and IC chip, sensor chip etc.
Background technology
Temperature sensor is widely used in the equipment such as personal computer, mobile phone, automobile, medical equipment, game console, microfluid sensor.Along with popularizing of portable sets such as the raising of IC integrated level and notebook computer, portable terminal, PDA, the power consumption heat dissipation problem becomes more and more outstanding.Have only the working temperature of chip is controlled accurately, could guarantee the equipment steady operation.Also need the very little temperature sensor of volume to come the temperature of responsive air-flow in the microfluid sensor.Deficiencies such as traditional temperature sensor is big owing to volume, power consumption is high, the linearity is bad further develop and use thereby restricted it.
Naiio-electro-meclianical systems claims NEMS again, grows up on microelectronics system (MEMS) basis, a kind of emerging technology of characteristic dimension in the 0.1-100 nanometer range.The main application fields of nanometer technology has: optical communication, microwave communication, medical science, household electrical appliances etc., and therefore adopt nanometer technology to make temperature sensor, the performance that further improves electronic product has become gordian technique.
Summary of the invention
The purpose of this utility model is to avoid the weak point in the above-mentioned background technology and a kind of micro temperature sensor that adopts micromachined technology to be made into the nanoscale that volume is minimum, temperature measurement range is extremely wide is provided, and the utility model also has simple in structure, in light weight, characteristics such as thermal capacity is little, response speed is fast, measuring accuracy is high, the linearity is good, low in energy consumption, reliability is high, high conformity, cost are low.
The purpose of this utility model is achieved in that
It comprises silicon cavity 1, lower floor's silicon nitride film layer 2, upper silicon nitride rete 3, adhesion layer 4, thermo-sensitive resistor layer 5, conductive layer 6, semi-girder 7, silica coating 8, wherein one deck lower floor silicon nitride film layer 2 structures are processed in deposit below silicon cavity 1, deposit processing layer of silicon dioxide rete 8 structures above the silicon cavity 1, deposit processing one deck upper silicon nitride rete 3 structures on the silica coating 8, silica coating 8 below the upper silicon nitride rete 3, the cavity body structure is emptied in 1 corrosion of silicon cavity, upper silicon nitride rete 3 corrosion processing on silicon cavity 1 cavity become semi-girder 7 structures of hanging structure, sputter processing one deck adhesion layer 4 structures on the semi-girder 7, sputter processing one deck thermo-sensitive resistor layer 5 structure on the adhesion layer 4, thermo-sensitive resistor layer 5 structure two ends are sputter processing one deck conductive layer 6 structures respectively.
The gauge of the utility model lower floor silicon nitride film layer 2 is 300 nanometer to 3000 nanometers; The gauge of upper silicon nitride rete 3 is 300 nanometer to 3000 nanometers; The gauge of adhesion layer 4 is 5 nanometer to 500 nanometers; The gauge of thermo-sensitive resistor layer 5 is 5 nanometer to 500 nanometers; The gauge of conductive layer 6 is 5 nanometer to 3000 nanometers.
The utility model upper silicon nitride rete 3 can adopt silicon nitride or dense borosilicate, made of silicon dioxide; Adhesion layer 4 can adopt chromium or titanium, nickel-chrome to make; Thermo-sensitive resistor layer 5 can adopt platinum or tungsten, nickel-chrome, platinum-rhodium alloy to make; Conductive layer 6 can adopt gold or copper, aluminum to do.
The utility model is compared background technology and is had following advantage:
1, the utility model adopts microelectronic processing technology to be made into the sensor for measuring temperature of multi-layer film structure, thus volume can make minimum; Adopt thermo-sensitive resistor layer 5 as the thermometric sensitive element, have that temperature measurement accuracy height, the linearity are good, a high conformity, stable and reliable for performance, temperature measurement range is wide (can reach-78 ℃ to 600 ℃) advantage.
2, the utility model adopts silicon cavity 1 cavity body structure and semi-girder 7 structures, and one-piece construction is unsettled, makes sensor reduce thermal capacity, temperature-responsive is fast, low in energy consumption.
3, the utility model adopts the micromechanical process processing and fabricating, make device have simple in structure, in light weight, processed finished products rate height, cost low, be convenient to advantage such as batch process.
Description of drawings
Fig. 1 is a main TV structure synoptic diagram of the present utility model.
Fig. 2 is a three-dimensional structure synoptic diagram of the present utility model.
Embodiment
With reference to Fig. 1, Fig. 2, the utility model is made of silicon cavity 1, lower floor's silicon nitride film layer 2, upper silicon nitride rete 3, adhesion layer 4, thermo-sensitive resistor layer 5, conductive layer 6, semi-girder 7, silica coating 8.The utility model adopts the silicon base material as silicon cavity 1 manufacturing materials, and embodiment silicon cavity 1 adopts the monocrystalline silicon disk to make.Below silicon cavity 1, adopt the low-pressure chemical vapor phase deposition technology of general chemical vapor deposition device or the masking layer of plasma-reinforced chemical vapor deposition process deposit one deck lower floor silicon nitride film layer 2 conduct corrosion silicon, the deposition thickness of lower floor's silicon nitride film layer 2 is 300 nanometer to 3000 nanometers, and the processing thickness of embodiment lower floor silicon nitride film layer 2 is 500 nanometers.
The utility model adopts the low-pressure chemical vapor phase deposition technology or the plasma-reinforced chemical vapor deposition process deposit layer of silicon dioxide rete 8 of general chemical vapor deposition device on silicon cavity 1, as the sacrifice layer of corrosion silicon.
The utility model adopts the low-pressure chemical vapor phase deposition technology or the plasma-reinforced chemical vapor deposition process deposit upper silicon nitride rete 3 of general chemical vapor deposition device on silica coating 8, as the masking layer of corrosion silicon; Upper silicon nitride rete 3 can adopt silicon nitride or dense borosilicate, made of silicon dioxide, and deposition thickness is 300 nanometer to 3000 nanometers, and the processing thickness of embodiment upper silicon nitride rete 3 is 500 nanometers, adopts silicon nitride material to make.
The utility model adopts silicon dioxide etching technology that 3 following silicon dioxide 8 corrosion of upper silicon nitride rete are emptied.
The utility model adopts the EPW wet corrosion technique that the cavity body structure is emptied in 3 following silicon cavity 1 corrosion of upper silicon nitride rete, and 200 microns of the degree of depth are emptied in the embodiment corrosion.
The upper silicon nitride rete 3 using plasma etching technics of the utility model on silicon cavity 1 cavity are etched into semi-girder 7 structures of hanging structure, as the supporting structure of thermo-sensitive resistor layer 5.Its effect be make the thermal capacity of temperature sensor less, when accepting the heat of equivalent, the range of temperature of sensor is big, temperature-responsive speed is faster.
The utility model adopts magnetron sputtering technique sputter one deck adhesion layer 4 on semi-girder 7, and its effect is to be used for connecting semi-girder 7 and thermo-sensitive resistor layer 5, and the gauge of adhesion layer 4 is 5 nanometer to 500 nanometers, and material can adopt chromium or titanium, nickel-chrome to make.The processing thickness that embodiment makes adhesion layer 4 is 10 nanometers, adopts the chromium material.
The utility model adopts magnetron sputtering technique at adhesion layer 4 sputter one deck thermo-sensitive resistor layers 5, and as temperature-sensing element (device), its principle is the variation that the variation of ambient temperature causes resistance, thereby can measure variation of temperature.The gauge of thermo-sensitive resistor layer 5 is 5 nanometer to 500 nanometers, can be made into the temperature sensor of different size according to the different-thickness of thermo-sensitive resistor layer 5.Material can adopt platinum or tungsten, nickel-chrome, platinum-rhodium alloy to make.The thickness that embodiment makes thermo-sensitive resistor layer 5 is 10 nanometers, adopts alloy platinum material to make, and the temperature measurement range of alloy platinum material can be made and be reached-78 ℃ to 600 ℃, and temperature measurement range is extremely wide.
The utility model adopts magnetron sputtering technique to process sputter one deck conductive layer 6 electrode structures respectively at thermo-sensitive resistor layer 5 structure two ends, and it act as and reduces lead resistance and limit the zone that thermo-sensitive resistor layer 5 is experienced temperature variation.The gauge of conductive layer 6 is 5 nanometer to 3000 nanometers, can adopt gold or copper, aluminum to do.The sputter of embodiment conductive layer 6 is of a size of 10 nanometers, adopts gold copper-base alloy to make.Whole sensor encapsulation back also can directly be integrated in the circuit that uses sensor by the link electrode of conductive layer 6 as external circuit during use.
Concise and to the point principle of work of the present utility model is as follows: conductive layer 6 two ends are inserted in the circuit-under-test, because the variation of thermo-sensitive resistor layer 5 environment temperature, cause the variation of thermo-sensitive resistor layer 5 resistance, thereby the size according to change in resistance can directly be changed the size of measuring temperature variation, reach measure temperature, as the purpose of sensor.Being specially adapted to microfluid sensor etc. wants the less occasion of cube embedded at the thermometric sensor device of sheet as accurate temperature measurement and IC chip, sensor chip etc.
Claims (3)
1, a kind of micro temperature sensor of nanoscale, it comprises silicon cavity (1), it is characterized in that: it also comprises lower floor's silicon nitride film layer (2), upper silicon nitride rete (3), adhesion layer (4), thermo-sensitive resistor layer (5), conductive layer (6), semi-girder (7), silica coating (8), wherein one deck lower floor's silicon nitride film layer (2) structure is processed in deposit below silicon cavity (1), deposit processing layer of silicon dioxide rete (8) structure above the silicon cavity (1), silica coating (8) is gone up deposit processing one deck upper silicon nitride rete (3) structure, silica coating (8) below the upper silicon nitride rete (3), the cavity body structure is emptied in silicon cavity (1) corrosion, upper silicon nitride rete (3) corrosion processing on silicon cavity (1) cavity becomes semi-girder (7) structure of hanging structure, semi-girder (7) is gone up sputter processing one deck adhesion layer (4) structure, adhesion layer (4) is gone up sputter processing one deck thermo-sensitive resistor layer (5) structure, and thermo-sensitive resistor layer (5) structure two ends are sputter processing one deck conductive layer (6) electrode structure respectively.
2, the micro temperature sensor of nanoscale according to claim 1 is characterized in that: the gauge of lower floor's silicon nitride film layer (2) is that 300 interior rice are to 3000 interior rice; The gauge of upper silicon nitride rete (3) is 300 nanometer to 3000 nanometers; The gauge of adhesion layer (4) is 5 nanometer to 500 nanometers; The gauge of thermo-sensitive resistor layer (5) is 5 nanometer to 500 nanometers; The gauge of conductive layer (6) is 5 nanometer to 3000 nanometers.
3, according to the micro temperature sensor of claims 1 or 2 described nanoscales, it is characterized in that: upper silicon nitride rete (3) can adopt silicon nitride or dense borosilicate, made of silicon dioxide; Adhesion layer (4) can adopt chromium or titanium, nickel-chrome to make; Thermo-sensitive resistor layer (5) can adopt platinum or tungsten, nickel-chrome, platinum-rhodium alloy to make; Conductive layer (6) can adopt gold or copper, aluminum to do.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005200233525U CN2767978Y (en) | 2005-01-13 | 2005-01-13 | Minitype temperature sensor with nanometer scale |
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2005200233525U CN2767978Y (en) | 2005-01-13 | 2005-01-13 | Minitype temperature sensor with nanometer scale |
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| CN2767978Y true CN2767978Y (en) | 2006-03-29 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507035A (en) * | 2011-11-17 | 2012-06-20 | 山东省科学院能源研究所 | Precise temperature measurement device in micro space, probe and temperature measurement method thereof |
| CN102564624A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Micro-machine temperature sensor structure |
| CN102564623A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Temperature sensor structure vertical to structure field emission micro machine |
| CN104792378A (en) * | 2014-01-17 | 2015-07-22 | 无锡华润上华半导体有限公司 | Infrared gas concentration meter, micro flow sensor, temperature sensitive resistor structure and manufacturing method thereof |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| CN109843439A (en) * | 2016-10-18 | 2019-06-04 | 美纳里尼硅生物系统股份公司 | Microfluidic system |
| WO2020042913A1 (en) * | 2018-08-28 | 2020-03-05 | 无锡华润上华科技有限公司 | Temperature sensor preparation method and temperature sensor |
| CN114235195A (en) * | 2021-11-18 | 2022-03-25 | 厦门大学 | Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof |
| CN114636485A (en) * | 2022-02-25 | 2022-06-17 | 清华大学深圳国际研究生院 | Flexible thin film sensor for measuring internal temperature of battery, preparation method and battery |
| CN115979448A (en) * | 2022-12-30 | 2023-04-18 | 北京理工大学 | High-precision micro-nano temperature sensor for near space detection |
-
2005
- 2005-01-13 CN CNU2005200233525U patent/CN2767978Y/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102507035B (en) * | 2011-11-17 | 2013-05-08 | 山东省科学院能源研究所 | Precise temperature measurement device in micro space, probe and temperature measurement method thereof |
| CN102507035A (en) * | 2011-11-17 | 2012-06-20 | 山东省科学院能源研究所 | Precise temperature measurement device in micro space, probe and temperature measurement method thereof |
| CN102564624A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Micro-machine temperature sensor structure |
| CN102564623A (en) * | 2011-12-29 | 2012-07-11 | 东南大学 | Temperature sensor structure vertical to structure field emission micro machine |
| CN102564624B (en) * | 2011-12-29 | 2013-08-28 | 东南大学 | Micro-machine temperature sensor structure |
| CN104792378A (en) * | 2014-01-17 | 2015-07-22 | 无锡华润上华半导体有限公司 | Infrared gas concentration meter, micro flow sensor, temperature sensitive resistor structure and manufacturing method thereof |
| CN104792378B (en) * | 2014-01-17 | 2018-04-06 | 无锡华润上华科技有限公司 | Infrared-gas densimeter, microfluidic sensor, thermo-sensitive resistor structure and its manufacture method |
| US11077437B2 (en) | 2016-10-18 | 2021-08-03 | Menarini Silicon Biosystems S.P.A. | Microfluidic system |
| CN109843439A (en) * | 2016-10-18 | 2019-06-04 | 美纳里尼硅生物系统股份公司 | Microfluidic system |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| CN110862063A (en) * | 2018-08-28 | 2020-03-06 | 无锡华润上华科技有限公司 | Temperature sensor preparation method and temperature sensor |
| WO2020042913A1 (en) * | 2018-08-28 | 2020-03-05 | 无锡华润上华科技有限公司 | Temperature sensor preparation method and temperature sensor |
| CN114235195A (en) * | 2021-11-18 | 2022-03-25 | 厦门大学 | Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof |
| CN114636485A (en) * | 2022-02-25 | 2022-06-17 | 清华大学深圳国际研究生院 | Flexible thin film sensor for measuring internal temperature of battery, preparation method and battery |
| CN115979448A (en) * | 2022-12-30 | 2023-04-18 | 北京理工大学 | High-precision micro-nano temperature sensor for near space detection |
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| C14 | Grant of patent or utility model | ||
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Expiration termination date: 20150113 Granted publication date: 20060329 |