CN113363378A - Magnetic random memory cells based on control of opposite spin currents in alloys - Google Patents
Magnetic random memory cells based on control of opposite spin currents in alloys Download PDFInfo
- Publication number
- CN113363378A CN113363378A CN202110611143.6A CN202110611143A CN113363378A CN 113363378 A CN113363378 A CN 113363378A CN 202110611143 A CN202110611143 A CN 202110611143A CN 113363378 A CN113363378 A CN 113363378A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- layer
- spin
- orbit coupling
- random access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 203
- 239000000956 alloy Substances 0.000 title claims abstract description 48
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 39
- 230000008878 coupling Effects 0.000 claims abstract description 50
- 238000010168 coupling process Methods 0.000 claims abstract description 50
- 238000005859 coupling reaction Methods 0.000 claims abstract description 50
- 230000005415 magnetization Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 9
- 229910001325 element alloy Inorganic materials 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 186
- 230000005641 tunneling Effects 0.000 claims description 29
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 13
- 230000002441 reversible effect Effects 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 3
- 229910002056 binary alloy Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 229910017107 AlOx Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
本公开提供了一种基于合金中相反自旋流控制的磁随机存储单元，包括：衬底、缓冲层、自旋轨道耦合层和磁隧道结层；自旋轨道耦合层的材料为产生相反自旋流的包含重金属元素的二元或多元合金材料；磁隧道结层形成于自旋轨道耦合层上；磁隧道结层包括磁自由层，所述磁自由层形成于所述自旋轨道耦合层上；在所述自旋轨道耦合层施加脉冲电流，所述自旋轨道耦合层产生相反自旋流，通过所述相反自旋流诱导所述磁隧道结中的所述磁自由层的磁矩发生180°定向翻转。本公开不再使用高密度电流通入隧穿结实现磁自由层磁化翻转的方式，通过自旋轨道耦合层中产生的相反自旋流，由自旋轨道矩诱导磁自由层磁矩发生定向翻转。
The present disclosure provides a magnetic random memory cell based on opposite spin current control in an alloy, comprising: a substrate, a buffer layer, a spin-orbit coupling layer and a magnetic tunnel junction layer; the material of the spin-orbit coupling layer is to generate opposite spins A swirling binary or multi-element alloy material containing heavy metal elements; a magnetic tunnel junction layer is formed on the spin-orbit coupling layer; the magnetic tunnel junction layer includes a magnetic free layer, and the magnetic free layer is formed on the spin-orbit coupling layer On; applying a pulse current to the spin-orbit coupling layer, the spin-orbit coupling layer generates an opposite spin current, and induces the magnetic moment of the magnetic free layer in the magnetic tunnel junction through the opposite spin current A 180° orientation flip occurs. The present disclosure no longer uses the method of high-density current flowing into the tunnel junction to realize the magnetization reversal of the magnetic free layer, and the orientation reversal of the magnetic moment of the magnetic free layer is induced by the spin-orbit moment through the opposite spin current generated in the spin-orbit coupling layer. .
Description
Technical Field
The present disclosure relates to the field of information technology and microelectronics, and in particular, to a magnetic random access memory cell, a magnetic random access memory array, a magnetoresistive device, and a compilable logic device based on opposite spin flow control in an alloy.
Background
In the present society, the existence of massive information makes people have higher and higher requirements for processing and storing information, so that the search for a novel non-volatile, low-power-consumption and high-speed information processing and storage device becomes a current research hotspot. Compared to conventional information devices, in which the spin of electrons is used for processing and storing information, it is likely to be one of the most promising technologies. Spin transfer torque-magnetic random access memory (STT-MRAM) and spin orbit torque-magnetic random access memory (SOT-MRAM) in laboratory research are both based on magnetization reversal of a magnetic free layer in a memory cell, resulting in a change in magnetoresistance, thereby realizing an information storage function, and having advantages of high speed and non-volatility. The magnetization switching based on the magnetic free layer in STT-MARM is realized by current, and usually requires very high current density (10)6-107A/cm2) And the large current passes through the tunnel junction area of the memory, so that the power consumption is overlarge, and the tunnel junction area of the memory is easy to break down due to the fact that the large current is led in for a long time, so that the service life of the memory is greatly shortened.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a magnetic random access memory cell based on opposite spin flow control in an alloy and a method for manufacturing the same, so as to solve the technical problems presented above.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a magnetic random access memory cell based on opposing spin flow control in an alloy, comprising:
a substrate;
a buffer layer formed on the substrate;
the spin orbit coupling layer is made of a binary or multi-element alloy material which generates reverse spin flow and contains heavy metal elements;
a magnetic tunnel junction layer formed on the spin-orbit coupling layer; the magnetic tunnel junction layer includes a magnetic free layer formed on the spin-orbit coupling layer;
and applying a pulse current to the spin orbit coupling layer, wherein the spin orbit coupling layer generates opposite spin current, and the opposite spin current induces the magnetic moment of the magnetic free layer in the magnetic tunnel junction to generate 180-degree directional overturning.
In some embodiments of the present disclosure, the spin-orbit coupling layer is a binary alloy material containing heavy metals and rare earth elements that generates opposite spin currents, including PtxLa1-x、PtxCe1-x、PtxPr1-x、PtxNd1-x、PtxPm1-x、PtxSm1-x、PtxEu1-x、PtxGd1-x、PtxTb1-x、PtxDy1-x、PtxHo1-x、PtxEr1-x、PtxTm1-x、PtxYb1-x、PtxLu1-x、TaxLal-x、TaxCe1-x、TaxPr1-x、TaxNd1-x、TaxPm1-x、TaxSm1-x、TaxEu1-x、TaxGd1-x、TaxTb1-x、TaxDy1-x、TaxHo1-x、TaxEr1-x、TaxTm1-x、TaxYb1-x、TaxLu1-x、WxLa1-x、WxCe1-x、WxPr1-x、WxNd1-x、WxPm1-x、WxSm1-x、WxEu1-x、WxGd1-x、WxTb1-x、WxDy1-x、WxHo1-x、WxEr1-x、WxTm1-x、WxYb1-x、WxLu1-x、PtxW1-x、PtxTa1-xOr a multicomponent alloy comprising PtxGdyTi1-x-y、PtxGdyMo1-x-y、PtxGdyCu1-x-y、PtxTbyMo1-x-y、PtxTbyTi1-x-y、PtxTbyCu1-x-y、PtxDyyMo1-x-y、PtxDyyTi1-x-y、PtxDyyCu1-x-y、TaxGdyTi1-x-y、TaxGdyMo1-x-y、TaxGdyCu1-x-y、PtxTayV1-x-y、PtxWyGdzCu1-x-y-zOne or more of (a).
In some embodiments of the present disclosure, the spin-orbit coupling layer is an alloy material containing a heavy metal element and other non-magnetic elements composition generating an opposite spin current, including PtxZr1-x、PtxMo1-x、PtxNb1-x、PtxTc1-x、PtxCu1-x、PtxTi1-x、TaxZr1-x、TaxMo1-x、TaxNb1-x、TaxTc1-x、TaxCu1-x、TaxTi1-x、WxZr1-x、WxMo1-x、WxNb1-x、WxTc1-x、WxCu1-x、WxTi1-xOne or more of (a).
In some embodiments of the present disclosure, the magnetic tunnel junction layer further comprises:
the tunneling insulating layer is formed on the magnetic free layer and is an oxide film;
a magnetic pinning layer formed on the tunneling insulating layer;
an antiferromagnetic layer formed on the magnetic pinning layer;
a protective layer formed on the antiferromagnetic layer.
In some embodiments of the present disclosure, the easy magnetization direction of the magnetic pinned layer is parallel to a surface direction of the magnetic pinned layer; the easy magnetization direction of the magnetic free layer is parallel to the surface direction of the magnetic pinned layer.
In some embodiments of the present disclosure, the easy magnetization direction of the magnetic pinned layer is perpendicular to the surface direction of the magnetic pinned layer; the easy magnetization direction of the magnetic free layer is perpendicular to the surface direction of the magnetic pinned layer.
In some embodiments of the present disclosure, the tunneling insulating layer has a thickness of 0.5 to 3 nm.
According to one aspect of the present disclosure, there is provided a magnetic random access memory array comprising: a plurality of magnetic random access memory cells based on opposing spin flow control in the alloy as described above, an array arrangement being formed between the substrate and the buffer layer.
According to one aspect of the present disclosure, there is provided a magnetoresistive device, using an epitaxial structure formed from a magnetic random access memory cell based on opposing spin flow control in an alloy as described above, the magnetoresistive device comprising: giant magnetoresistance devices or anisotropic tunneling magnetoresistance devices.
According to an aspect of the present disclosure, there is provided a compilable logic device, comprising: a plurality of magnetic random access memory arrays as described above are connected in series or in parallel to form a logic gate.
(III) advantageous effects
From the technical scheme, the magnetic random access memory unit, the magnetic random access memory array, the magnetoresistive device and the interpretable logic device based on the reverse spin flow control in the alloy have at least one or part of the following beneficial effects:
the method for realizing magnetization reversal of the magnetic free layer without introducing high-density current into a tunneling junction is characterized in that the magnetic moment of the magnetic free layer is induced to generate directional reversal by the spin orbit torque through the opposite spin current generated in the spin orbit coupling layer, and the method has the advantages of no dependence on an external magnetic field, low power consumption, high stability, long service life, capability of compiling and the like, and can be applied to the fields of nonvolatile high-energy-efficiency storage, integration of storage and calculation, brain-like calculation and the like.
Drawings
FIG. 1 is a schematic diagram of a MRAM cell based on opposite spin flow control in an alloy according to an embodiment of the disclosure.
FIG. 2 is a schematic diagram of writing/reading information in an initial state of a V-V type MRAM cell based on opposite spin flow control in an alloy according to an embodiment of the disclosure.
FIG. 3 is a schematic diagram of writing/reading information in a V-V type MRAM cell based on opposite spin flow control in the alloy under application of a pulse voltage (generating a pulse current) according to an embodiment of the disclosure.
FIG. 4 is a schematic diagram of writing/reading information in an initial state of a P-P type MRAM cell based on opposite spin flow control in an alloy according to an embodiment of the disclosure.
FIG. 5 is a schematic diagram of writing/reading information in a P-P type alloy based on reverse spin flow control magnetic random access memory cell under application of a pulse voltage (generating a pulse current) according to an embodiment of the disclosure.
FIG. 6 is a schematic diagram of a compliable logic device composed of two MRAM cells based on opposing spin flow control in an alloy, according to an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
100 substrate
200 buffer layer
300 spin orbit coupling layer
400 magnetic tunnel junction layer
410 magnetic tunnel junction cell
411 magnetic free layer
412 tunnel insulating layer
413 magnetic pinning layer
414 antiferromagnetic layer
500 protective layer
Detailed Description
In order to reduce the power consumption of an information device and improve the service life of the device, the method is mainly realized by two ways: the first is to realize magnetization reversal of a magnetic free layer in a tunneling junction by using voltage, which requires introduction of a thicker ferroelectric material; and secondly, the SOT effect is utilized to enable the magnetization of the magnetic free layer in the memory to be reversed so as to realize the electrical writing of magnetic information. Because the writing channel and the reading channel of the information are separated, large current does not pass through a tunnel junction area of the memory, so that the power consumption of the memory is greatly reduced, and the service life of the memory is also greatly prolonged. However, magnetic storage based on the SOT effect usually requires an additional magnetic field for assistance, which is not favorable for large-scale integration of the memory device, thereby restricting the further development of information technology.
The present disclosure provides a magnetic random access memory cell based on opposing spin flow control in an alloy, comprising: the device comprises a substrate, a buffer layer, a spin-orbit coupling layer and a magnetic tunnel junction layer; the spin orbit coupling layer is made of binary or multi-element alloy material which generates reverse spin flow and contains heavy metal elements; a magnetic tunnel junction layer formed on the spin-orbit coupling layer; the magnetic tunnel junction layer comprises a magnetic free layer formed on the spin-orbit coupling layer; and applying a pulse current to the spin orbit coupling layer, wherein the spin orbit coupling layer generates opposite spin current, and the opposite spin current induces the magnetic moment of the magnetic free layer in the magnetic tunnel junction to generate 180-degree directional overturning.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a magnetic random access memory cell based on opposing spin flow control in an alloy is provided. FIG. 1 is a schematic diagram of a MRAM cell based on opposite spin flow control in an alloy according to an embodiment of the disclosure. As shown in FIG. 1, embodiments of the present disclosure provide a magnetic random access memory cell based on opposing spin flow control in an alloy, comprising: a substrate 100; a buffer layer 200 formed on the substrate 100; a spin-orbit coupling layer 300 formed on the buffer layer 200; a magnetic tunnel junction 400 is formed on the spin-orbit coupling layer 300, the magnetic tunnel junction 400 including a number of tunnel junction units 410, the tunnel junction units 410 including a magnetic free layer 411, a tunneling insulating layer 412, a magnetic pinning layer 413, and an antiferromagnetic layer 414, the magnetic free layer 411 being formed on the spin-orbit coupling layer 300, the tunneling insulating layer 412 being formed on the magnetic free layer 411, the magnetic pinning layer 413 being formed on the tunneling insulating layer 412, the antiferromagnetic layer 414 being formed on the magnetic pinning layer 413; the desired protective layer 500 is formed on the antiferromagnetic layer 414.
The preparation method of the magnetic random access memory unit based on the control of the opposite spin currents in the alloy comprises the following steps:
step S1: a buffer layer 200 is grown on a substrate 100, so that a subsequently grown film is smooth and flat, and is prepared by adopting a magnetron sputtering mode preferentially.
Step S2: the spin-orbit coupling layer 300 is grown on the buffer layer 200, and the spin-orbit coupling layer 300 can be formed by a binary alloy (such as Pt, Ta or W) formed by heavy metal elements (such as Pt, Ta or W) with strong spin-orbit coupling, rare earth elements (such as La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), and/or other elements (such as Ti, Cu, V, Zr, Nb, Mo and Tc) with 3d, 4d and 4fxGd1-x、PtxDy1-x、TaxTb1-x、PtxTa1-x、PtxMo1-xEtc.) or multi-element alloys (Pt)xGdyTi1-x-y、PtxTbyMo1-x-y、PtxTayV1-x-y，PtxWyGdzCu1-x-y-zEtc.), preferably by magnetron sputtering. The spin-orbit coupling layer is a different element with precisely controlled composition as requiredAlloys of composition, e.g. PtxGd1-x、PtxDy1-x、PtxTa1-x、PtxGdyTi1-x-y、PtxWyGdzCu1-x-y-zAnd when current is introduced into the layer, reverse spin current is generated due to strong spin-orbit coupling effect, and the spin-orbit torque effect can realize the directional overturning of the magnetic torque of the magnetic free layer in the magnetic tunnel junction under the zero external magnetic field.
Step S3: growing a magnetic tunnel junction layer 400 on the spin-orbit coupling layer 300, comprising: a magnetic free layer 411, a tunneling insulating layer 412, a magnetic pinned layer 413, an antiferromagnetic layer 414.
Wherein:
growing the magnetic free layer 411 in the magnetic tunnel junction layer 400 on the spin-orbit coupling layer 300, the material can be selected from Co, CoxFe1-xOr CoxFeyB1-x-yAnd the like, by controlling the thickness of the magnetic free layer 411 (and/or post annealing treatment under a magnetic field) to enable the easy magnetization direction to be vertical or parallel to the surface direction of the free layer 411, and obtaining different magnetic anisotropy, the preparation method preferentially adopts a magnetron sputtering mode. The easy magnetization direction of the magnetic free layer 411 material is a ferromagnetic material such as a magnetic metal, an alloy or a magnetic metal multilayer film, a magnetic semiconductor and the like parallel to or vertical to the surface direction of the layer;
further, a tunneling insulating layer 412 is grown on the magnetic free layer 411, and the material may be MgO or AlOxThe preparation method preferentially adopts a magnetron sputtering mode, and the thickness is controlled to be 0.5-3 nm;
further, a magnetic pinning layer 413 is grown on the tunneling insulating layer 412, the material of which can be selected from Co, CoxFe1-xOr CoxFeyB1-x-yAnd the like, the easy magnetization direction of the magnetic layer is perpendicular or parallel to the surface direction of the layer obtained by controlling the thickness of the magnetic pinning layer 413 (and/or post annealing treatment under a magnetic field), and the preparation is preferably carried out by magnetron sputtering. The easy magnetization direction of the material of the magnetic pinning layer 413 is parallel or vertical to the surface direction of the layer, and the easy magnetization direction of the material is ferromagnetic such as magnetic metal, alloy or magnetic metal multilayer film, magnetic semiconductor, etcA material;
further, an antiferromagnetic layer 414 is grown over the magnetic pinning layer 413, the layer of material being optionally IrxMn1-x，PtxMn1-xOr FexMn1-xAnd the like, the preparation is preferably carried out by adopting a magnetron sputtering mode;
step S4: a protective layer 500 is grown over the antiferromagnetic layer 414.
The above is a typical preparation method of the mram based on the control of the spins in the alloy in the embodiment, and the mram based on the control of the spins in the alloy in the embodiment can be continuously manufactured on the multilayer film structure, according to the actual requirement, a plurality of cylindrical or other structural units are manufactured on the basic multilayer film structure by etching and the like, and are electrically connected to form an array pattern. The present embodiment adopts cylindrical magnetic tunnel junction cells, and connects them in series, and fills the insulating material between the cells, so as to form the magnetic random access memory cell based on the control of the opposite spin currents in the alloy described in the present embodiment.
The embodiment of the invention also provides a random storage array based on the opposite spin current control magnetism in the alloy, which comprises: a plurality of mram cells based on the control of the reverse spin flow in the alloy as described above are formed between the substrate 100 and the buffer layer 200 in an array arrangement. Each of the MRAM cells based on the control of the opposing spin currents in the alloy includes: a spin-orbit coupling layer 300 and a magnetic tunnel junction cell 410. The magnetic tunnel junction unit 410 includes: the magnetic free layer 411, the tunneling insulating layer 412, the magnetic pinned layer 413, and the antiferromagnetic layer 414 of the multilayer film structure of the above-described embodiment. The protection layer 500 is formed on the antiferromagnetic layer 414.
The method comprises the following specific steps:
step S1': on the magnetic random memory unit which is prepared, preparing a corresponding array pattern according to actual needs by a photoetching or electron beam exposure method, and preparing a plurality of magnetic random memory units which form array arrangement by a wet etching or dry etching method, wherein each magnetic random memory unit comprises: a spin-orbit coupling layer 310 and a magnetic tunnel junction cell 410.
Step S2': growing a layer of metal between the prepared magnetic tunnel junction units 410, connecting the buffer layer 200 between the unit blocks, considering that the opposite spin current is needed to drive the directional turning of the magnetic moment of the magnetic free layer in the magnetic tunnel junction, the thickness of the metal layer is the same as or slightly less than that of the spin orbit coupling layer 300, etching the metal layer into a strip structure which is perpendicular to the arrangement direction of the bottom electrode and is parallel to the bottom electrode as an intermediate electrode, and growing an insulating material SiO by a thermal oxidation/deposition method/sputtering method2，AlOxOr Si3N4And the insulating layer is filled between the magnetic tunnel junction units to play a role of isolating adjacent unit blocks, wherein the insulating layer is flush with the upper surface of the protective layer 500 and fills gaps between the magnetic tunnel junction units 410.
Step S3': in the insulating layer SiO2，AlOxOr Si3N4A layer of metal is grown on the top layer, and the metal layer is connected to each magnetic tunnel junction unit 410 and the protective layer 500, and etched into a strip structure parallel to the arrangement direction of the bottom electrodes and parallel to each other as the top electrode.
The above is the preparation method of the magnetic random access memory cell based on the reverse spin flow control in the alloy in this embodiment.
After the fabrication is completed, the magnetization directions of the magnetic random access memory cell, particularly the magnetic free layer 411 and the magnetic pinned layer 413, are initialized by an applied magnetic field.
FIG. 2 is a schematic diagram of writing/reading information in the initial state of a V-V type MRAM cell based on the reverse spin flow control in the alloy. For a V-V type magnetic tunnel junction, initialization is such that the magnetic moments of the magnetic free layer 411 and the magnetic pinned layer 413 are aligned in parallel and perpendicular to the layer surface, and a small constant current source I is applied in the magnetic tunnel junction 400 for detecting the magnetic tunneling resistance, which is at a low state.
FIG. 3 is a schematic diagram of the writing/reading of information after applying a pulse voltage (generating a pulse current) to the V-V type MRAM cell based on the reverse spin flow control in the alloy. By applying a positive pulse voltage U (generating a positive pulse current) to the spin-orbit coupling layer 300, the direction of the magnetic moment of the magnetic free layer 411 in the magnetic tunnel junction 400 is turned by 180 ° by using the spin-orbit torque effect generated by the opposite spin current, so that the tunneling resistance jumps, the magnetic random access memory cell writes a signal of "1", and the change of the tunneling resistance can be detected by reading the change of the V value. When a negative pulse voltage U (generating a negative pulse current) is input to the spin-orbit coupling layer 300, the magnetic moment of the magnetic free layer 411 in the magnetic tunnel junction 400 is restored, so that the resistance jumps, a "0" signal is written into the magnetic random access memory cell, and the change of the tunneling resistance is detected by reading the change of the V value.
In another embodiment of the present invention, a P-P type MRAM cell based on opposite spin flow control in an alloy is provided. This embodiment differs from the previous embodiments in that: in initializing the magnetic random access memory cell, magnetic moments of the magnetic free layer 411 and the magnetic pinned layer 413 in the magnetic tunnel junction layer 400 initialized by an applied magnetic field are both aligned in parallel, and the magnetic moment of the magnetic free layer 411 and the magnetic moment of the magnetic pinned layer 413 are both parallel to a layer surface.
FIG. 4 is a schematic diagram of the writing/reading of information in the initial state of a P-P type MRAM cell based on the reverse spin flow control in the alloy. For a P-P type magnetic tunnel junction, the initialized magnetic moments of the magnetic free layer 411 and the magnetic pinned layer 413 are aligned parallel to the layer surface direction, and a small constant current source I is applied in the magnetic tunnel junction 400 for detecting the tunneling resistance, which is at a low state at this time.
FIG. 5 is a schematic diagram of the information writing/reading of the P-P type MRAM cell based on the reverse spin flow control in the alloy after applying a pulse voltage (generating a pulse current). After a positive pulse voltage U is applied to the spin-orbit coupling layer 300 (a positive pulse current is generated), the direction of the magnetic moment of the magnetic free layer 411 in the magnetic tunnel junction 400 is turned by 180 degrees by using a spin-orbit torque effect generated by competing spin current, so that the tunneling resistance jumps, a signal of '1' is written into the magnetic random access memory unit, and the change of the tunneling resistance can be detected by reading the change of the V value. When a negative pulse voltage U (generating a negative pulse current) is input to the spin-orbit coupling layer 300, the magnetic moment of the magnetic free layer 411 in the magnetic tunnel junction 400 is restored, so that the resistance jumps, a "0" signal is written into the magnetic random access memory cell, and the change of the tunneling resistance is detected by reading the change of the V value.
FIG. 6 is a schematic diagram of a compiler-based logic device comprising two MRAM cells according to an embodiment of the present invention. A nor gate can be implemented using two of the above-described magnetic random access memory cells. The NOR gate implementation method comprises the following steps: the two devices are connected in an arrangement as shown in fig. 6, with the output being a series connection of two magnetic random access memory cells. Pulsed voltage U applied in spin orbit coupling layer 300 in two magnetic random access memory cells1And U2(generating pulse currents I respectively1And I2) 1 when both units output high levels, and 0 otherwise; wherein, the positive pulse voltage U is set as 1, the negative pulse voltage U is set as 0, the high tunneling magnetoresistance measured in the tunnel junction is high level, and the low tunneling magnetoresistance is low level. For example, when the spin-orbit coupling layers of the two devices are applied with negative pulse voltage U1And U2(generating negative pulse currents I, respectively1And I2) (corresponding to 0, 0), both magnetic random access memory cells output a low tunneling magnetoresistance, i.e., corresponding to a low level, so the final output is 0. When the pulse voltages applied to the spin-orbit coupling layer 300 in the two magnetic memory cells are 1, 0 or 0, 1, respectively, the two magnetic random access memory cells output a low level and a high level, or a high level and a low level, which are added to cancel each other, so that the output is 0. When a positive pulse voltage U is applied to the spin-orbit coupling layer 300 in both devices1And U2(generating positive pulse currents I, respectively1And I2) (corresponding to 1, 1), both individual magnetic random access memory cells output a high level, again after superposition, so the final output is 1. This function is a nor gate function.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should have a clear understanding of the present disclosure based on MRAM cells, MRAM arrays, magnetoresistive devices, and compilable logic devices with opposing spin flow control in the alloy.
In summary, the present disclosure provides a method for implementing magnetization reversal of a magnetic free layer without using a high-density current to pass through a tunneling junction, and a magnetic moment of the magnetic free layer is induced by a spin-orbit torque to perform directional reversal through an opposite spin current generated in a spin-orbit coupling layer, so that the method has the advantages of no external magnetic field dependence, low power consumption, high stability, long service life, capability of compiling, and the like, and can be applied to the fields of non-volatile high-energy-efficiency storage, integration of storage and computation, brain-like computation, and the like.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A magnetic random access memory cell based on opposite spin flow control in an alloy, comprising:
a substrate;
a buffer layer formed on the substrate;
the spin orbit coupling layer is made of a binary or multi-element alloy material which generates reverse spin flow and contains heavy metal elements;
a magnetic tunnel junction layer formed on the spin-orbit coupling layer; the magnetic tunnel junction layer includes a magnetic free layer formed on the spin-orbit coupling layer;
and applying a pulse current to the spin orbit coupling layer, wherein the spin orbit coupling layer generates opposite spin current, and the opposite spin current induces the magnetic moment of the magnetic free layer in the magnetic tunnel junction to generate 180-degree directional overturning.
2. The magnetic random memory cell of claim 1 wherein the spin-orbit coupling layer is a binary alloy material or a multi-element alloy material containing a heavy metal and a rare earth element that generates an opposite spin current.
3. The magnetic random access memory cell of claim 1 wherein the spin-orbit coupling layer is an alloy material containing a heavy metal element in combination with other non-magnetic elements that produces an opposite spin current.
4. The magnetic random access memory cell of any of claims 1 to 3 wherein the magnetic tunnel junction layer further comprises:
the tunneling insulating layer is formed on the magnetic free layer and is an oxide film;
a magnetic pinning layer formed on the tunneling insulating layer;
an antiferromagnetic layer formed on the magnetic pinning layer;
a protective layer formed on the antiferromagnetic layer.
5. The magnetic random access memory cell of claim 4 wherein the easy magnetization direction of the magnetic pinned layer is parallel to the surface direction of the magnetic pinned layer; the easy magnetization direction of the magnetic free layer is parallel to the surface direction of the magnetic pinned layer.
6. The magnetic random access memory cell of claim 4 wherein the easy magnetization direction of the magnetic pinned layer is perpendicular to the surface direction of the magnetic pinned layer; the easy magnetization direction of the magnetic free layer is perpendicular to the surface direction of the magnetic pinned layer.
7. The MRAM cell of claim 4, wherein the tunneling insulating layer has a thickness of 0.5 to 3 nm.
8. A magnetic random access memory array, comprising:
a plurality of the alloy-based opposing spin flow controlled magnetic random access memory cells of any of claims 1 to 7, an array arrangement formed between the substrate and the buffer layer.
9. A magnetoresistive device utilizing an epitaxial structure formed from the alloy-based opposite spin flow controlled magnetic random access memory cell of any of claims 1 to 7, the magnetoresistive device comprising: giant magnetoresistance devices or anisotropic tunneling magnetoresistance devices.
10. A compilable logic device, comprising: a plurality of magnetic random access memory arrays according to claim 8, connected in series or in parallel to form a logic gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110611143.6A CN113363378A (en) | 2021-06-01 | 2021-06-01 | Magnetic random memory cells based on control of opposite spin currents in alloys |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110611143.6A CN113363378A (en) | 2021-06-01 | 2021-06-01 | Magnetic random memory cells based on control of opposite spin currents in alloys |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113363378A true CN113363378A (en) | 2021-09-07 |
Family
ID=77531056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110611143.6A Pending CN113363378A (en) | 2021-06-01 | 2021-06-01 | Magnetic random memory cells based on control of opposite spin currents in alloys |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113363378A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170229160A1 (en) * | 2016-01-20 | 2017-08-10 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
| CN110635024A (en) * | 2019-10-29 | 2019-12-31 | 中国科学院半导体研究所 | Controlled magnetic random access memory based on competitive spin current and its preparation method |
-
2021
- 2021-06-01 CN CN202110611143.6A patent/CN113363378A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170229160A1 (en) * | 2016-01-20 | 2017-08-10 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
| CN110635024A (en) * | 2019-10-29 | 2019-12-31 | 中国科学院半导体研究所 | Controlled magnetic random access memory based on competitive spin current and its preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109300495B (en) | Magnetic structure based on artificial antiferromagnetic free layer and SOT-MRAM | |
| CN109560193B (en) | Magnetic structure based on artificial antiferromagnetic pinned layer and SOT-MRAM | |
| JP5797254B2 (en) | High-speed low-power magnetic device based on current-induced spin-momentum transfer | |
| US8456898B2 (en) | Magnetic element having perpendicular anisotropy with enhanced efficiency | |
| US9343658B2 (en) | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques | |
| RU2580378C2 (en) | Recordable magnetic element | |
| CN101067967B (en) | Magnetic memory device | |
| US8971977B2 (en) | Superconducting devices with ferromagnetic barrier junctions | |
| CN102414756B (en) | Magnetic stack having an assisting layer | |
| JP5366961B2 (en) | Magnetic recording element, magnetic memory cell, and magnetic random access memory | |
| CN112652706B (en) | A spin-orbit moment memory cell without external magnetic field | |
| CN103794715B (en) | A kind of based on voltage-controlled magnetic memory | |
| JP2008198900A (en) | Magnetic memory element and magnetic storage device | |
| CN109690675A (en) | A kind of novel word line pulse wiring method can be applied to magnetotunneling knot | |
| CN105633111A (en) | Electrical field assisted writing magnetic tunnel junction unit and writing method thereof | |
| JPWO2012004883A1 (en) | Magnetoresistive element and random access memory using the same | |
| CN116847715B (en) | Spin-orbit moment magnetic storage unit and magnetic random access memory based on exchange bias | |
| EP2355142B1 (en) | Magnetic memory element and nonvolatile storage device | |
| CN110635024A (en) | Controlled magnetic random access memory based on competitive spin current and its preparation method | |
| US20240296878A1 (en) | Semiconductor Memory Device with Spin-Orbit Coupling Channel | |
| CN103280234B (en) | Magnetic RAM | |
| US11706994B2 (en) | Electric field controlled magnetoresistive random-access memory | |
| JP2010093091A (en) | Magnetic memory, magnetic memory array and method of writing information in magnetic memory array | |
| CN115996628A (en) | Spin-orbit torque magnetic random access memory and operation method thereof | |
| CN113363378A (en) | Magnetic random memory cells based on control of opposite spin currents in alloys |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210907 |