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CN113363266B - Array substrate and pixel driving circuit - Google Patents

Array substrate and pixel driving circuit Download PDF

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CN113363266B
CN113363266B CN202110644710.8A CN202110644710A CN113363266B CN 113363266 B CN113363266 B CN 113363266B CN 202110644710 A CN202110644710 A CN 202110644710A CN 113363266 B CN113363266 B CN 113363266B
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signal line
active layer
source
layer
transistor
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CN113363266A (en
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范文志
张明
程卫高
朱超
李瑶
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Hefei Visionox Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0257Reduction of after-image effects

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)

Abstract

本发明公开了一种阵列基板及像素驱动电路,阵列基板包括呈阵列分布的多个像素电路以及与各像素电路电连接的第一信号线。像素电路包括驱动晶体管,驱动晶体管包括有源层、源漏极层和栅极层,源漏极层包括相互绝缘的源极和漏极,第一信号线设于栅极层背离有源层一侧,源极与第一信号线间形成第一电容,通过增大源极与第一信号线之间的重合面积,增大第一电容的电容量,减小驱动晶体管的栅极与驱动晶体管的源极之间的电位差,避免驱动晶体管的栅极与驱动晶体管的源极之间长时间保持较大的电位差,从而避免在切换画面时上一个画面依然存在导致的残影,提高显示面板的显示效果。

Figure 202110644710

The invention discloses an array substrate and a pixel driving circuit. The array substrate includes a plurality of pixel circuits distributed in an array and a first signal line electrically connected to each pixel circuit. The pixel circuit includes a drive transistor, the drive transistor includes an active layer, a source-drain layer and a gate layer, the source-drain layer includes a source and a drain that are insulated from each other, and the first signal line is arranged on the gate layer away from the active layer. On the side, a first capacitance is formed between the source and the first signal line, and by increasing the overlapping area between the source and the first signal line, the capacitance of the first capacitance is increased, and the gate of the driving transistor and the driving transistor are reduced. The potential difference between the sources of the driving transistor avoids a large potential difference between the gate of the driving transistor and the source of the driving transistor for a long time, thereby avoiding the residual image caused by the existence of the previous screen when switching screens, and improving the display The display effect of the panel.

Figure 202110644710

Description

阵列基板及像素驱动电路Array substrate and pixel driving circuit

技术领域technical field

本发明属于电子产品技术领域,尤其涉及一种阵列基板及像素驱动电路。The invention belongs to the technical field of electronic products, and in particular relates to an array substrate and a pixel driving circuit.

背景技术Background technique

随着光电显示领域的发展创新,数字化显示装置得到了广泛应用,其中,显示面板是显示装置中不可或缺的人际沟通界面,尤其是有机发光二极管(Organic LightEmitting Diode,OLED)显示面板,具有自发光、节能降耗、可弯曲、柔韧性佳等优点,而被广泛应用于智能手机、电脑显示器等终端产品中。但目前的显示面板的显示黑白动态的图像时往往具有一定的延迟性,即画面亮度需调整后才逐步稳定,其宏观表现为从黑画面切换到白画面、以及滚动黑白画面时会出现拖影现象。With the development and innovation of the optoelectronic display field, digital display devices have been widely used. Among them, the display panel is an indispensable human communication interface in the display device, especially the organic light emitting diode (Organic Light Emitting Diode, OLED) display panel. Due to the advantages of light emission, energy saving, consumption reduction, bendability, and good flexibility, it is widely used in terminal products such as smartphones and computer monitors. However, the current display panel often has a certain delay when displaying black and white dynamic images, that is, the brightness of the screen needs to be adjusted before it gradually stabilizes, and its macroscopic manifestations are switching from black screen to white screen and smearing when scrolling black and white screens. Phenomenon.

因此,亟需一种新的阵列基板及像素驱动电路。Therefore, there is an urgent need for a new array substrate and pixel driving circuit.

发明内容Contents of the invention

本发明实施例提供了一种阵列基板及像素驱动电路,该阵列基板减少了黑白图像切换时的跳变电压,改善了显示面板的拖影,提高显示效果。Embodiments of the present invention provide an array substrate and a pixel driving circuit. The array substrate reduces jump voltages when black and white images are switched, improves smear of a display panel, and improves display effect.

本发明实施例一方面提供了一种阵列基板,包括呈阵列分布的多个像素电路以及与各所述像素电路电连接的第一信号线;所述像素电路包括驱动晶体管,所述驱动晶体管包括有源层以及绝缘设置于所述有源层上的源漏极层和栅极层,所述源漏极层包括相互绝缘的源极和漏极,所述第一信号线设于所述栅极层背离所述有源层一侧,所述源极在所述第一信号线上的投影面积大于所述漏极在所述第一信号线上的投影面积。On the one hand, an embodiment of the present invention provides an array substrate, including a plurality of pixel circuits distributed in an array and a first signal line electrically connected to each of the pixel circuits; the pixel circuit includes a driving transistor, and the driving transistor includes an active layer and a source-drain layer and a gate layer that are insulated on the active layer, the source-drain layer includes a source and a drain that are insulated from each other, and the first signal line is arranged on the gate The pole layer is away from the side of the active layer, and the projected area of the source on the first signal line is larger than the projected area of the drain on the first signal line.

根据本发明的一个方面,在沿所述第一信号线的延伸方向上,所述源极在所述有源层上的正投影和所述栅极层在所述有源层上的正投影之间的最大距离大于所述漏极在所述有源层上的正投影和所述栅极层在所述有源层上的正投影之间的最大距离。According to an aspect of the present invention, in the extending direction along the first signal line, the orthographic projection of the source on the active layer and the orthographic projection of the gate layer on the active layer The maximum distance between them is greater than the maximum distance between the orthographic projection of the drain electrode on the active layer and the orthographic projection of the gate layer on the active layer.

根据本发明的一个方面,在沿所述第一信号线的延伸方向上,所述源极在所述有源层上的正投影和所述栅极层在所述有源层上的正投影之间的最大距离为20μm~60μm。According to an aspect of the present invention, in the extending direction along the first signal line, the orthographic projection of the source on the active layer and the orthographic projection of the gate layer on the active layer The maximum distance between them is 20 μm to 60 μm.

根据本发明的一个方面,所述第一信号线包括高电平电源信号线或低电平电源信号线。According to an aspect of the present invention, the first signal line includes a high-level power signal line or a low-level power signal line.

根据本发明的一个方面,还包括第一绝缘层和第二绝缘层,在垂直于所述第一信号线的延伸方向且垂直于所述有源层的方向上,所述第一绝缘层设于所述有源层和所述栅极层之间,所述第二绝缘层设于所述栅极层和所述第一信号线之间。According to one aspect of the present invention, it further includes a first insulating layer and a second insulating layer, and in a direction perpendicular to the extending direction of the first signal line and perpendicular to the active layer, the first insulating layer is set Between the active layer and the gate layer, the second insulating layer is disposed between the gate layer and the first signal line.

根据本发明的一个方面,所述源极在所述有源层上的正投影和所述第一信号线在所述有源层上的正投影的重合部分呈矩形、T字形中的至少一种。According to one aspect of the present invention, the overlapping portion of the orthographic projection of the source on the active layer and the orthographic projection of the first signal line on the active layer is at least one of a rectangle and a T shape. kind.

根据本发明的一个方面,在垂直于所述第一信号线的延伸方向且平行于所述有源层的方向上,所述源极在所述第一信号线上的正投影的长度大于所述漏极在第一信号线上的正投影的长度;和/或,所述源极在所述第一信号线上的正投影的宽度大于所述漏极在第一信号线上的正投影的宽度。According to one aspect of the present invention, in a direction perpendicular to the extension direction of the first signal line and parallel to the active layer, the length of the orthographic projection of the source on the first signal line is greater than the The length of the orthographic projection of the drain on the first signal line; and/or, the width of the orthographic projection of the source on the first signal line is greater than the orthographic projection of the drain on the first signal line width.

根据本发明的一个方面,所述有源层包括沟道部,所述沟道部设于所述源极和所述漏极之间的间隔内,且所述沟道部在所述第一信号线上的正投影和所述栅极层在所述第一信号线上的正投影至少部分重合。According to an aspect of the present invention, the active layer includes a channel portion, the channel portion is provided in the space between the source and the drain, and the channel portion is in the first The orthographic projection on the signal line and the orthographic projection of the gate layer on the first signal line are at least partially coincident.

根据本发明的一个方面,所述沟道部在所述第一信号线上的正投影的延伸轨迹为直线、折线中的一者。According to an aspect of the present invention, the extending track of the orthographic projection of the channel portion on the first signal line is one of a straight line and a broken line.

本发明实施例还提供了一种像素驱动电路,包括:发光元件;驱动模块,用于向所述发光元件提供驱动电流;存储模块,与所述驱动模块连接,用于维持所述驱动模块的控制端的电位;数据写入模块,与所述驱动模块、所述存储模块连接,用于将数据信号写入所述驱动模块的控制端;发光控制模块,与所述发光元件、所述驱动模块以及电源电压输入端连接,用于控制所述发光元件发光;初始化模块,与所述驱动模块、所述发光元件连接,用于对所述驱动模块的控制端和所述发光元件进行初始化;电位差缩减模块,与所述驱动模块、所述发光控制模块连接,用于在所述电源电压输入端的电源电压信号的作用下,减小所述驱动模块的输入端与所述驱动模块的控制端的电位差。与现有技术相比,本发明实施例提供的阵列基板,包括呈阵列分布的多个像素电路以及与各像素电路电连接的第一信号线。像素电路包括驱动晶体管,驱动晶体管包括有源层、源漏极层和栅极层,源漏极层包括相互绝缘的源极和漏极,第一信号线设于栅极层背离有源层一侧,源极与第一信号线间形成第一电容,通过增大源极与第一信号线之间的重合面积,增大第一电容的电容量,减小驱动晶体管的栅极与驱动晶体管的源极之间的电位差,避免驱动晶体管的栅极与驱动晶体管的源极之间长时间保持较大的电位差,从而避免在切换画面时上一个画面依然存在导致的残影,提高显示面板的显示效果。The embodiment of the present invention also provides a pixel driving circuit, including: a light emitting element; a driving module, configured to provide a driving current to the light emitting element; a storage module, connected to the driving module, configured to maintain the The potential of the control terminal; the data writing module is connected with the driving module and the storage module, and is used to write the data signal into the control terminal of the driving module; the light-emitting control module is connected with the light-emitting element and the driving module And the power supply voltage input terminal is used to control the light emitting element to emit light; the initialization module is connected to the driving module and the light emitting element, and is used to initialize the control terminal of the driving module and the light emitting element; The difference reduction module is connected with the driving module and the lighting control module, and is used to reduce the difference between the input terminal of the driving module and the control terminal of the driving module under the action of the power supply voltage signal at the input terminal of the power supply voltage. Potential difference. Compared with the prior art, the array substrate provided by the embodiment of the present invention includes a plurality of pixel circuits distributed in an array and a first signal line electrically connected to each pixel circuit. The pixel circuit includes a drive transistor, the drive transistor includes an active layer, a source-drain layer and a gate layer, the source-drain layer includes a source and a drain that are insulated from each other, and the first signal line is arranged on the gate layer away from the active layer. On the side, a first capacitor is formed between the source and the first signal line, and by increasing the overlapping area between the source and the first signal line, the capacitance of the first capacitor is increased, and the gate of the drive transistor and the drive transistor are reduced. The potential difference between the sources of the driving transistor avoids a large potential difference between the gate of the driving transistor and the source of the driving transistor for a long time, thereby avoiding the residual image caused by the existence of the previous screen when switching screens, and improving the display The display effect of the panel.

附图说明Description of drawings

为了更清楚地说明本发明实施例的技术方案,下面将对本发明实施例中所需要使用的附图作简单地介绍,显而易见地,下面所描述的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the accompanying drawings required in the embodiments of the present invention. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without making creative efforts.

图1是本发明实施例提供的一种阵列基板的结构示意图;FIG. 1 is a schematic structural diagram of an array substrate provided by an embodiment of the present invention;

图2是图1中沿A-A方向的截面图;Fig. 2 is a sectional view along the A-A direction in Fig. 1;

图3是本发明实施例提供的又一种阵列基板的结构示意图;3 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;

图4是本发明实施例提供的又一种阵列基板的结构示意图;FIG. 4 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;

图5是本发明实施例提供的又一种阵列基板的结构示意图;FIG. 5 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;

图6是本发明实施例提供的一种像素驱动电路的结构示意图;FIG. 6 is a schematic structural diagram of a pixel driving circuit provided by an embodiment of the present invention;

图7是本发明实施例提供的一种像素驱动电路的电路图;FIG. 7 is a circuit diagram of a pixel driving circuit provided by an embodiment of the present invention;

图8是本发明实施例提供的一种像素驱动电路的时序图。FIG. 8 is a timing diagram of a pixel driving circuit provided by an embodiment of the present invention.

具体实施方式Detailed ways

下面将详细描述本发明的各个方面的特征和示例性实施例。在下面的详细描述中,提出了许多具体细节,以便提供对本发明的全面理解。但是,对于本领域技术人员来说很明显的是,本发明可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本发明的示例来提供对本发明的更好的理解。Features and exemplary embodiments of various aspects of the invention will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by showing examples of the present invention.

需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括……”限定的要素,并不排除在包括要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device. Without further limitations, an element defined by the statement "comprising..." does not exclude the presence of additional identical elements in the process, method, article or device that includes the element.

为了更好地理解本发明,下面结合图1至图8根据本发明实施例的阵列基板及像素驱动电路进行详细描述。In order to better understand the present invention, the array substrate and the pixel driving circuit according to the embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 8 .

请参阅图1和图2,本发明实施例提供了一种阵列基板,该阵列基板包括呈阵列分布的多个像素电路以及与各像素电路电连接的第一信号线1;像素电路包括驱动晶体管,驱动晶体管包括有源层2以及绝缘设置于有源层2上的源漏极层3和栅极层4,源漏极层3包括相互绝缘的源极31和漏极32,第一信号线1设于栅极层4背离有源层2一侧,源极31在第一信号线1上的投影面积大于漏极32在第一信号线1上的投影面积。Please refer to FIG. 1 and FIG. 2, an embodiment of the present invention provides an array substrate, the array substrate includes a plurality of pixel circuits distributed in an array and a first signal line 1 electrically connected to each pixel circuit; the pixel circuit includes a driving transistor , the drive transistor includes an active layer 2 and a source-drain layer 3 and a gate layer 4 that are insulated on the active layer 2, the source-drain layer 3 includes a source 31 and a drain 32 that are insulated from each other, and the first signal line 1 is disposed on the side of the gate layer 4 facing away from the active layer 2, and the projected area of the source 31 on the first signal line 1 is larger than the projected area of the drain 32 on the first signal line 1.

需要说明的是,第一信号线1设于栅极层4背离有源层2一侧,从而源极31与第一信号线1间形成第一电容C1,当显示面板出现黑白图像的切换时,第一电容C1放电为驱动晶体管的源极31提供电压,减小驱动晶体管的栅极与驱动晶体管的源极31之间的电位差,避免驱动晶体管的栅极与驱动晶体管的源极31之间长时间保持较大的电位差,从而避免在切换画面时上一个画面依然存在导致的残影,提高显示面板的显示效果,为此本发明实施例中第一信号线1设于栅极层4背离有源层2一侧,源极31在第一信号线1上的投影面积大于漏极32在第一信号线1上的投影面积。通过增大源极31与第一信号线2之间的投影面积,增大第一电容C1的电容量,进一步减少了驱动晶体管的栅极与驱动晶体管的源极31之间的电位差,从而改善了显示面板的拖影,提高显示效果。It should be noted that the first signal line 1 is arranged on the side of the gate layer 4 away from the active layer 2, so that a first capacitance C1 is formed between the source electrode 31 and the first signal line 1. When the display panel switches between black and white images, , the discharge of the first capacitor C1 provides a voltage for the source 31 of the driving transistor, reduces the potential difference between the gate of the driving transistor and the source 31 of the driving transistor, and avoids the potential difference between the gate of the driving transistor and the source 31 of the driving transistor. Keep a large potential difference for a long time, so as to avoid image sticking caused by the existence of the previous screen when switching screens, and improve the display effect of the display panel. For this reason, in the embodiment of the present invention, the first signal line 1 is arranged on the gate layer 4 On the side away from the active layer 2, the projected area of the source 31 on the first signal line 1 is larger than the projected area of the drain 32 on the first signal line 1. By increasing the projected area between the source 31 and the first signal line 2 and increasing the capacitance of the first capacitor C1, the potential difference between the gate of the driving transistor and the source 31 of the driving transistor is further reduced, thereby Improved the smear of the display panel and improved the display effect.

根据电容量的计算公式,第一电容C1的电容量与极板间介质的介电常数和极板面积成正比,与极板间的距离成反比。因此在极板间介质的介电常数和极板间距离为一定值的前提下,通过增大源极31与第一信号线1的相对重合面积,便能够增大第一电容C1的电容量。即增大第一电容C1电容量后在第一电容C1放电时能够进一步提高驱动晶体管的源极31上的电位,减小驱动晶体管的栅极与驱动晶体管的源极31之间的电位差。According to the capacitance calculation formula, the capacitance of the first capacitor C1 is proportional to the dielectric constant of the medium between the plates and the area of the plates, and inversely proportional to the distance between the plates. Therefore, on the premise that the dielectric constant of the medium between the plates and the distance between the plates are a certain value, by increasing the relative overlapping area between the source electrode 31 and the first signal line 1, the capacitance of the first capacitor C1 can be increased. . That is, increasing the capacitance of the first capacitor C1 can further increase the potential on the source 31 of the driving transistor and reduce the potential difference between the gate of the driving transistor and the source 31 of the driving transistor when the first capacitor C1 is discharged.

为了便于增大源极31与第一信号线2的重合面积,请参阅图1,在沿第一信号线2的延伸方向上,本发明实施例中源极31在有源层2上的正投影和栅极层4在有源层2上的正投影之间的最大距离大于漏极32在有源层2上的正投影和栅极层4在有源层2上的正投影之间的最大距离。因此,在单个驱动晶体管内源极31和漏极32的相对距离一定的情况下,通过调整栅极41相对源极31和漏极32的位置,即将栅极41向远离源极31的方向设置,形成非对称的驱动晶体管结构,即可实现增大源极31和第一信号线2之间的相对面积的效果,进而增大第一电容C1的电容量。In order to increase the overlapping area of the source electrode 31 and the first signal line 2, please refer to FIG. The maximum distance between the projection and the orthographic projection of the gate layer 4 on the active layer 2 is greater than the distance between the orthographic projection of the drain electrode 32 on the active layer 2 and the orthographic projection of the gate layer 4 on the active layer 2 maximum distance. Therefore, when the relative distance between the source 31 and the drain 32 in a single drive transistor is constant, by adjusting the position of the gate 41 relative to the source 31 and the drain 32, the gate 41 is set in a direction away from the source 31 By forming an asymmetric driving transistor structure, the effect of increasing the relative area between the source electrode 31 and the first signal line 2 can be achieved, thereby increasing the capacitance of the first capacitor C1.

可选的,源极31在有源层2上的正投影和栅极层4在有源层2上的正投影之间的最大距离为20μm~60μm。其具体尺寸可根据驱动晶体管的实际结构进行调整,在此不作具体限定。Optionally, the maximum distance between the orthographic projection of the source electrode 31 on the active layer 2 and the orthographic projection of the gate layer 4 on the active layer 2 is 20 μm˜60 μm. Its specific size can be adjusted according to the actual structure of the driving transistor, and is not specifically limited here.

为了进一步说明阵列基板的具体结构,请参阅图2,阵列基板的驱动晶体管包括有源层2、源漏极层3和栅极层4,有源层2为驱动晶体管所在的半导体层,源漏极层3包括相互绝缘的源极31和漏极32,源漏极层3为驱动晶体管的源极31和漏极32所在的金属导电层,栅极层4为驱动晶体管的栅极41所在的金属导电层。驱动晶体管还包括层间绝缘层5,层间绝缘层5包括第一绝缘层51和第二绝缘层52,第一绝缘层51设于有源层2和栅极层4之间,在垂直于第一信号线1的延伸方向且垂直于有源层2的方向上,第二绝缘层52设于栅极层4和第一信号线1之间。驱动晶体管的栅极41通常用于接收控制信号,使驱动晶体管31在控制信号的控制下导通或截止。驱动晶体管的源极31连接第一信号线,漏极32连接发光元件,当栅极41接收到导通的控制信号时,栅极41控制有源层2导通,在源极31和漏极32之间形成通路,从而实现发光元件的发光。In order to further illustrate the specific structure of the array substrate, please refer to FIG. 2. The driving transistor of the array substrate includes an active layer 2, a source and drain layer 3, and a gate layer 4. The active layer 2 is the semiconductor layer where the driving transistor is located, and the source and drain The electrode layer 3 includes a source 31 and a drain 32 insulated from each other. The source-drain layer 3 is a metal conductive layer where the source 31 and the drain 32 of the driving transistor are located, and the gate layer 4 is where the gate 41 of the driving transistor is located. metal conductive layer. The drive transistor also includes an interlayer insulating layer 5, the interlayer insulating layer 5 includes a first insulating layer 51 and a second insulating layer 52, the first insulating layer 51 is arranged between the active layer 2 and the gate layer 4, and is perpendicular to In the extending direction of the first signal line 1 and perpendicular to the direction of the active layer 2 , the second insulating layer 52 is disposed between the gate layer 4 and the first signal line 1 . The gate 41 of the driving transistor is generally used to receive a control signal, so that the driving transistor 31 is turned on or off under the control of the control signal. The source 31 of the drive transistor is connected to the first signal line, and the drain 32 is connected to the light-emitting element. When the gate 41 receives the control signal for conducting, the gate 41 controls the active layer 2 to conduct, and the source 31 and the drain 32 to form a passage, so as to realize the light emitting element.

请参阅图1和图2,源极31在有源层2上的正投影和第一信号线1在有源层2上的正投影部分重合,即形成以源极31和第一信号线1为上下板、层间绝缘层5为极板间介质的第一电容C1。当显示面板出现黑白画面的切换时,第一电容C1能够实现对源极31的供电,减小栅极41和源极31之间的电位差。当增大源极31在第一信号线1上的投影面积时,第一电容C1的电容量也将增大,进一步减小栅极41和源极31之间的电位差,避免出现显示面板的拖影不良的现象。1 and 2, the orthographic projection of the source electrode 31 on the active layer 2 and the orthographic projection of the first signal line 1 on the active layer 2 partially overlap, that is, the source electrode 31 and the first signal line 1 are formed are the upper and lower plates, and the interlayer insulating layer 5 is the first capacitor C1 as the medium between the plates. When the display panel switches between black and white images, the first capacitor C1 can supply power to the source 31 and reduce the potential difference between the gate 41 and the source 31 . When the projected area of the source 31 on the first signal line 1 is increased, the capacitance of the first capacitor C1 will also increase, further reducing the potential difference between the gate 41 and the source 31, and avoiding the display panel The bad smear phenomenon.

可选的,有源层2可以是单晶硅有源层或多晶硅有源层,该多晶硅有源层可以是低温多晶硅(Low Temperature Poly-Silicon,LTPS)。源极31、漏极32和栅极41的材料可以包括钼、钛、铝、铜等中的一种或多种的组合。Optionally, the active layer 2 may be a single crystal silicon active layer or a polysilicon active layer, and the polysilicon active layer may be a low temperature polysilicon (Low Temperature Poly-Silicon, LTPS). Materials of the source 31 , the drain 32 and the gate 41 may include one or a combination of molybdenum, titanium, aluminum, copper, and the like.

其中,第一信号线包括电源信号线或接地信号线。具体的,当驱动晶体管为PMOS晶体管时,源极31连接高电平电源信号线即VDD信号线,漏极32连接发光元件,第一电容C1形成于源极31和VDD信号线之间。当驱动晶体管为NMOS晶体管时,源极31连接低电平电源信号线即VSS信号线,第一电容C1形成于低电平电源信号线和源极31之间。Wherein, the first signal line includes a power signal line or a ground signal line. Specifically, when the driving transistor is a PMOS transistor, the source 31 is connected to the high-level power signal line, ie, the VDD signal line, the drain 32 is connected to the light-emitting element, and the first capacitor C1 is formed between the source 31 and the VDD signal line. When the driving transistor is an NMOS transistor, the source 31 is connected to the low-level power signal line, that is, the VSS signal line, and the first capacitor C1 is formed between the low-level power signal line and the source 31 .

在一些可选的实施例中,源极31在有源层2上的正投影和第一信号线1在有源层2上的正投影的重合部分呈矩形、T字形中的至少一种。请参阅图1和图4,图1中源极31在有源层2上的正投影和第一信号线1在有源层2上的正投影的重合部分呈T字形,图4中源极31在有源层2上的正投影和第一信号线1在有源层2上的正投影的重合部分呈矩形。In some optional embodiments, the overlapping portion of the orthographic projection of the source electrode 31 on the active layer 2 and the orthographic projection of the first signal line 1 on the active layer 2 is at least one of a rectangle and a T shape. Please refer to Fig. 1 and Fig. 4, the overlapping part of the orthographic projection of the source 31 on the active layer 2 in Fig. 1 and the orthographic projection of the first signal line 1 on the active layer 2 is T-shaped, and the source in Fig. The overlapping portion of the orthographic projection of 31 on the active layer 2 and the orthographic projection of the first signal line 1 on the active layer 2 is rectangular.

可以理解的是,通过改变源极31在第一信号线1上投影面积能够增加第一电容C1的电容量。需要综合考虑该阵列基板的制备工艺和具体结构等来调整该重合部分形状,其能够增大第一电容C1的电容量即可。具体的,第一信号线1的线宽为1.5μm~25μm,第一信号线1的长度为1.5μm~25μm,且源极31在第一信号线1上投影面积为2.5μm2~500μm2,相比于现有技术能够有效所能增加的源极31在第一信号线1上投影面积大于5μm2,有效提高第一电容C1的电容量。It can be understood that the capacitance of the first capacitor C1 can be increased by changing the projected area of the source electrode 31 on the first signal line 1 . It is necessary to adjust the shape of the overlapped part by comprehensively considering the preparation process and specific structure of the array substrate, as long as the capacitance of the first capacitor C1 can be increased. Specifically, the line width of the first signal line 1 is 1.5 μm to 25 μm, the length of the first signal line 1 is 1.5 μm to 25 μm, and the projected area of the source 31 on the first signal line 1 is 2.5 μm 2 to 500 μm 2 Compared with the prior art, the projected area of the source electrode 31 on the first signal line 1 can be increased to be greater than 5 μm 2 , effectively increasing the capacitance of the first capacitor C1.

在一些可选的实施例中,在垂直于第一信号线1的延伸方向且平行于有源层2的方向上,源极31在第一信号线1上的正投影的长度大于漏极32在第一信号线1上的正投影的长度;和/或,源极31在第一信号线1上的正投影的宽度大于漏极32在第一信号线1上的正投影的宽度。具体的,可以通过调整源极31在第一信号线1上的正投影的长度和宽度中的至少一者来提高源极31在第一信号线1上投影面积。In some optional embodiments, in a direction perpendicular to the extending direction of the first signal line 1 and parallel to the active layer 2, the length of the orthographic projection of the source 31 on the first signal line 1 is longer than that of the drain 32 The length of the orthographic projection on the first signal line 1 ; and/or, the width of the orthographic projection of the source 31 on the first signal line 1 is greater than the width of the orthographic projection of the drain 32 on the first signal line 1 . Specifically, the projected area of the source electrode 31 on the first signal line 1 can be increased by adjusting at least one of the length and width of the orthographic projection of the source electrode 31 on the first signal line 1 .

此外,为了进一步便于源极31和漏极32的导通,提高发光元件发光的响应速度,请参阅图1、图2、图5和图6,本发明实施例中有源层2包括沟道部6,沟道部6设于源极31和漏极32之间的间隔内,且沟道部6在第一信号线1上的正投影和栅极层4在第一信号线1上的正投影至少部分重合。通过在栅极层4相对的有源层2内设置沟道部6,能够更便于栅极层4和有源层2之间的导通,提高发光元件的响应速度。In addition, in order to further facilitate the conduction of the source electrode 31 and the drain electrode 32 and improve the response speed of the light-emitting element, please refer to FIG. 1, FIG. 2, FIG. 5 and FIG. 6, the active layer 2 includes a channel part 6, the channel part 6 is arranged in the interval between the source electrode 31 and the drain electrode 32, and the orthographic projection of the channel part 6 on the first signal line 1 and the projection of the gate layer 4 on the first signal line 1 The orthographic projections are at least partially coincident. By disposing the channel part 6 in the active layer 2 opposite to the gate layer 4, the conduction between the gate layer 4 and the active layer 2 can be facilitated, and the response speed of the light-emitting element can be improved.

可选的,沟道部6在第一信号线1上的正投影的延伸轨迹为直线、折线中的一者。同样的,该沟道部6的具体延伸轨迹也可根据阵列基板的制备工艺和具体结构等来进行调整,其具体形状和尺寸在此不作具体限定。Optionally, the extending track of the orthographic projection of the channel portion 6 on the first signal line 1 is one of a straight line and a broken line. Similarly, the specific extension track of the channel portion 6 can also be adjusted according to the preparation process and specific structure of the array substrate, and its specific shape and size are not specifically limited here.

请参阅图6至图7,本发明实施例还提供了一种像素驱动电路,像素驱动电路包括发光元件D1、驱动模块P11、存储模块P12、数据写入模块P13、发光控制模块P14、初始化模块P15和电位差缩减模块P16。其中,发光元件D1可根据显示面板的类型选定,如发光元件D1具体可为发光二极管(Light Emitting Diode,LED)或有机发光二极管(Organic LightEmitting Diode,OLED),在此并不限定。具体的,发光元件D1的阴极与第二电源电压输入端VSS连接。Please refer to FIG. 6 to FIG. 7, the embodiment of the present invention also provides a pixel driving circuit, the pixel driving circuit includes a light emitting element D1, a driving module P11, a storage module P12, a data writing module P13, a light emitting control module P14, an initialization module P15 and potential difference reduction module P16. Wherein, the light emitting element D1 can be selected according to the type of the display panel, for example, the light emitting element D1 can specifically be a light emitting diode (Light Emitting Diode, LED) or an organic light emitting diode (Organic Light Emitting Diode, OLED), which is not limited herein. Specifically, the cathode of the light emitting element D1 is connected to the second power supply voltage input terminal VSS.

驱动模块P11可用于向发光元件D1提供驱动电流。具体地,可通过控制驱动模块P11的导通和关断,以控制驱动电流是否能通过驱动模块P11流向发光元件D1。The driving module P11 can be used to provide driving current to the light emitting element D1. Specifically, whether the driving current can flow to the light-emitting element D1 through the driving module P11 can be controlled by controlling the driving module P11 to be turned on and off.

存储模块P12与驱动模块P11连接,具有存储电能的作用。存储模块P12可用于维持驱动模块P11的控制端的电位。具体地,在像素驱动电路对像素单元的驱动过程中的充电阶段,可对存储模块P12进行充电。在驱动过程中的读写发光阶段,存储模块P12可利用充电阶段中充入的电压保持驱动模块P11的控制端的电位。The storage module P12 is connected with the drive module P11 and has the function of storing electric energy. The storage module P12 can be used to maintain the potential of the control terminal of the driving module P11. Specifically, the storage module P12 can be charged during the charging phase of the pixel driving circuit driving the pixel unit. In the read-write and light-emitting phase of the driving process, the storage module P12 can use the voltage charged in the charging phase to maintain the potential of the control terminal of the driving module P11.

数据写入模块P13与驱动模块P11、存储模块P12连接,用于将数据信号写入驱动模块P11的控制端。具体地,数据写入模块P13与数据信号端VDATA、第一扫描信号端S1连接。数据信号端VDATA用于提供数据信号。第一扫描信号端S1用于提供第一扫描信号。在驱动过程中的充电阶段,数据写入模块P13在第一扫描信号的控制下,利用数据信号通过驱动模块P11为存储模块P12充电。在驱动过程中的读写发光阶段,存储模块P12利用充电阶段中充入的电压保持驱动模块P11的控制端的电位,相当于将数据信号写入到驱动模块P11的控制端。The data writing module P13 is connected with the driving module P11 and the storage module P12, and is used for writing data signals into the control terminal of the driving module P11. Specifically, the data writing module P13 is connected to the data signal terminal VDATA and the first scan signal terminal S1. The data signal terminal VDATA is used to provide data signals. The first scan signal terminal S1 is used for providing a first scan signal. In the charging phase of the driving process, the data writing module P13 uses the data signal to charge the storage module P12 through the driving module P11 under the control of the first scan signal. In the read-write and light-emitting stage of the driving process, the storage module P12 uses the voltage charged in the charging stage to maintain the potential of the control terminal of the drive module P11, which is equivalent to writing data signals into the control terminal of the drive module P11.

发光控制模块P14与发光元件D1、驱动模块P11以及电源电压输入端连接,用于控制发光元件D1发光。具体地,发光控制模块P14与发光控制信号端EM、第一电源电压输入端VDD连接。发光控制信号端EM用于提供发光控制信号。第一电源电压输入端VDD用于提供高电平信号。在驱动过程中的读写发光阶段,发光控制模块P14在发光控制信号的控制下导通,能够将高电平信号产生的驱动电流传输至发光元件D1,使发光元件D1发光。The light emitting control module P14 is connected with the light emitting element D1, the driving module P11 and the input terminal of the power supply voltage, and is used for controlling the light emitting element D1 to emit light. Specifically, the light emission control module P14 is connected to the light emission control signal terminal EM and the first power supply voltage input terminal VDD. The light emission control signal terminal EM is used for providing light emission control signals. The first power supply voltage input terminal VDD is used to provide a high level signal. In the read-write and light-emitting stage of the driving process, the light-emitting control module P14 is turned on under the control of the light-emitting control signal, and can transmit the driving current generated by the high-level signal to the light-emitting element D1 to make the light-emitting element D1 emit light.

初始化模块P15与驱动模块P11、发光元件D1连接,分别用于对驱动模块P11的控制端以及发光元件D1的阳极进行初始化。具体地,初始化模块P15与参考电压信号端VREF、第二扫描信号端S2连接。参考电压信号端VREF用于提供参考电压信号,将参考电压信号作为初始化信号。在一些示例中,参考电压信号的电压为负。第二扫描信号端S2用于提供第二扫描信号。在驱动过程中的初始化阶段,初始化模块P15在第二扫描信号的控制下导通,一方面利用参考电压信号对驱动模块P11的控制端进行初始化,另一方面将参考电压信号的电压充入存储模块P12和发光元件D1的阳极,以对发光元件D1的阳极进行初始化。The initialization module P15 is connected with the driving module P11 and the light emitting element D1, and is used for initializing the control terminal of the driving module P11 and the anode of the light emitting element D1 respectively. Specifically, the initialization module P15 is connected to the reference voltage signal terminal VREF and the second scan signal terminal S2. The reference voltage signal terminal VREF is used to provide a reference voltage signal, and the reference voltage signal is used as an initialization signal. In some examples, the voltage of the reference voltage signal is negative. The second scan signal terminal S2 is used for providing a second scan signal. In the initialization stage of the driving process, the initialization module P15 is turned on under the control of the second scanning signal. On the one hand, the reference voltage signal is used to initialize the control terminal of the driving module P11, and on the other hand, the voltage of the reference voltage signal is charged into the storage module P12 and the anode of the light emitting element D1 to initialize the anode of the light emitting element D1.

电位差缩减模块P16与驱动模块P11、电源电压输入端连接,用于在第一电源电压输入端VDD输出的高电平信号的作用下,减小驱动模块P11的输入端与驱动模块P11的控制端的电位差。The potential difference reduction module P16 is connected to the drive module P11 and the power supply voltage input terminal, and is used to reduce the control between the input terminal of the drive module P11 and the drive module P11 under the action of the high-level signal output by the first power supply voltage input terminal VDD. terminal potential difference.

具体的,请参阅图6和图7,驱动模块P11包括第一晶体管T1,第一晶体管T1即为像素驱动电路中的驱动晶体管;存储模块P12包括第二电容C2;数据写入模块P13包括第二晶体管T2和第三晶体管T3;发光控制模块P14包括第四晶体管T4和第五晶体管T5;初始化模块P15包括第六晶体管T6和第七晶体管T7。Specifically, please refer to FIG. 6 and FIG. 7, the driving module P11 includes a first transistor T1, the first transistor T1 is the driving transistor in the pixel driving circuit; the storage module P12 includes a second capacitor C2; the data writing module P13 includes a second The second transistor T2 and the third transistor T3; the light emission control module P14 includes the fourth transistor T4 and the fifth transistor T5; the initialization module P15 includes the sixth transistor T6 and the seventh transistor T7.

第一晶体管T1的控制端与第二电容C2的第一端、第二晶体管T2的第二端、第六晶体管T6的第二端连接。第一晶体管T1的第一端与第三晶体管T3的第二端、第四晶体管T4的第二端、第一电容C1的第一端连接。第一晶体管T1的第二端与第二晶体管T2的第一端、第五晶体管T5的第一端连接。第一晶体管T1的第一端为驱动模块P11的输入端,第一晶体管T1的第二端为驱动模块P11的输出端。The control terminal of the first transistor T1 is connected with the first terminal of the second capacitor C2, the second terminal of the second transistor T2, and the second terminal of the sixth transistor T6. The first end of the first transistor T1 is connected to the second end of the third transistor T3, the second end of the fourth transistor T4, and the first end of the first capacitor C1. The second terminal of the first transistor T1 is connected with the first terminal of the second transistor T2 and the first terminal of the fifth transistor T5. The first terminal of the first transistor T1 is the input terminal of the driving module P11, and the second terminal of the first transistor T1 is the output terminal of the driving module P11.

第二晶体管T2的控制端与第一扫描信号端S1连接。第二晶体管T2的第一端与第五晶体管T5的第一端连接。第二晶体管T2的第二端与第二电容C2的第一端、第六晶体管T6的第二端连接。The control end of the second transistor T2 is connected to the first scan signal end S1. The first terminal of the second transistor T2 is connected with the first terminal of the fifth transistor T5. The second terminal of the second transistor T2 is connected with the first terminal of the second capacitor C2 and the second terminal of the sixth transistor T6.

第三晶体管T3的控制端与第一扫描信号端S1连接。第三晶体管T3的第一端与数据信号端VDATA连接。第三晶体管T3的第二端与第一电容C1的第一端、第四晶体管T4的第二端连接。The control terminal of the third transistor T3 is connected to the first scan signal terminal S1. The first terminal of the third transistor T3 is connected to the data signal terminal VDATA. The second terminal of the third transistor T3 is connected with the first terminal of the first capacitor C1 and the second terminal of the fourth transistor T4.

第四晶体管T4的控制端与发光控制信号端EM连接。第四晶体管T4的第一端与第一电源电压输入端VDD、第二电容C2的第二端连接。第四晶体管T4的第二端与第一电容C1的第一端连接。The control terminal of the fourth transistor T4 is connected to the light emission control signal terminal EM. The first terminal of the fourth transistor T4 is connected with the first power supply voltage input terminal VDD and the second terminal of the second capacitor C2. The second end of the fourth transistor T4 is connected to the first end of the first capacitor C1.

第五晶体管T5的控制端与发光控制信号端EM连接。第五晶体管T5的第二端与发光元件D1的阳极连接。The control terminal of the fifth transistor T5 is connected to the light emission control signal terminal EM. The second end of the fifth transistor T5 is connected to the anode of the light emitting element D1.

第六晶体管T6的控制端与第二扫描信号端S2连接。第六晶体管T6的第一端与参考电压输入端VREF、第七晶体管T7的第一端连接。第六晶体管T6的第二端与第二电容C2的第一端连接。The control terminal of the sixth transistor T6 is connected to the second scan signal terminal S2. The first terminal of the sixth transistor T6 is connected with the reference voltage input terminal VREF and the first terminal of the seventh transistor T7. The second end of the sixth transistor T6 is connected to the first end of the second capacitor C2.

第七晶体管T7的控制端与第二扫描信号端S2连接。第七晶体管T7的第一端与参考电压信号端VREF连接。第七晶体管T7的第二端与发光元件D1的阳极连接。第七晶体管T7的第二端为初始化模块P15的第一输出端。第一电容C1的第二端与第七晶体管的第二端连接。The control end of the seventh transistor T7 is connected to the second scan signal end S2. The first terminal of the seventh transistor T7 is connected to the reference voltage signal terminal VREF. The second end of the seventh transistor T7 is connected to the anode of the light emitting element D1. The second terminal of the seventh transistor T7 is the first output terminal of the initialization module P15. The second end of the first capacitor C1 is connected to the second end of the seventh transistor.

第二电容C2的第二端与第一电源电压输入端VDD连接。The second terminal of the second capacitor C2 is connected to the first power supply voltage input terminal VDD.

发光元件D1的阴极与第二电源电压输入端VSS连接。第二电源电压输入端VSS用于提供低电平信号,在一些示例中,第二电源电压输入端可为接地端,在此并不限定。The cathode of the light emitting element D1 is connected to the second power supply voltage input terminal VSS. The second power supply voltage input terminal VSS is used to provide a low-level signal. In some examples, the second power supply voltage input terminal may be a ground terminal, which is not limited herein.

以图3为例,像素电路在两帧之间的驱动时序包括三个阶段,初始化阶段、数据写入阶段和发光阶段。Taking FIG. 3 as an example, the driving sequence of the pixel circuit between two frames includes three phases, an initialization phase, a data writing phase and a light emitting phase.

在初始化阶段T1,第二扫描信号S2为高电平,发光控制信号EM和第一扫描信号S1为低电平。发光控制信号EM控制第四晶体管T4和第五晶体管T5断开;第二扫描信号S2控制第二晶体管T2、第三晶体管T3断开;第一扫描信号S1控制第六晶体管T6导通,初始电压VREF初始化第一晶体管T1的栅极;第一扫描信号S1控制第七晶体管T7导通,初始电压VREF初始化发光器件D1的阳极。同时,第一电容C1作为电位差缩减模块,在电源电压信号的作用下,减小驱动模块P11的输入端与驱动模块P11的控制端的电位差。具体的,相比于现有技术中的驱动模块P11的控制端相比驱动模块P11的输入端为高电平,在本实施例中,在第一电容C1的作用下,第一晶体管T1的输入端即源极的电位大于第一晶体管T1的控制端即栅极的电位,以使第一晶体管T1处于导通状态。例如,在现有技术的黑画面到白画面的两帧之间的初始化阶段T1,第一晶体管T1的源极的电压为-4V,栅极的电压为-3V,第一晶体管T1处于关闭状态,而在现有技术的白画面到白画面的两帧之间的初始化阶段T1,第一晶体管T1的源极的电压为0V,栅极的电压为-3V,第一晶体管T1处于导通状态,黑画面到白画面的两帧之间和白画面到白画面的两帧之间的第一晶体管T1状态不同,完成显示所需的时间,容易产生拖影等问题。In the initialization phase T1, the second scan signal S2 is at a high level, and the emission control signal EM and the first scan signal S1 are at a low level. The light emission control signal EM controls the fourth transistor T4 and the fifth transistor T5 to turn off; the second scan signal S2 controls the second transistor T2 and the third transistor T3 to turn off; the first scan signal S1 controls the sixth transistor T6 to turn on, and the initial voltage VREF initializes the gate of the first transistor T1; the first scan signal S1 controls the seventh transistor T7 to turn on, and the initial voltage VREF initializes the anode of the light emitting device D1. At the same time, the first capacitor C1 is used as a potential difference reduction module to reduce the potential difference between the input terminal of the driving module P11 and the control terminal of the driving module P11 under the action of the power supply voltage signal. Specifically, compared with the control terminal of the driving module P11 in the prior art, the input terminal of the driving module P11 is at a high level. In this embodiment, under the action of the first capacitor C1, the first transistor T1 The potential of the input terminal, that is, the source, is greater than the potential of the control terminal, that is, the gate of the first transistor T1, so that the first transistor T1 is in a conduction state. For example, in the initialization phase T1 between two frames from a black picture to a white picture in the prior art, the source voltage of the first transistor T1 is -4V, the gate voltage is -3V, and the first transistor T1 is in an off state , while in the initialization phase T1 between two frames from the white picture to the white picture in the prior art, the voltage of the source of the first transistor T1 is 0V, the voltage of the gate is -3V, and the first transistor T1 is in the conduction state , the state of the first transistor T1 is different between two frames from a black picture to a white picture and between two frames from a white picture to a white picture, the time required to complete the display is prone to problems such as smearing.

而在本发明的实施例中,黑画面到白画面的两帧之间的初始化阶段T1,第一晶体管T1的源极的电压为3V,栅极的电压为-3V,第一晶体管T1处于导通状态,而在白画面到白画面的两帧之间,第一晶体管T1的源极的电压为3V,栅极的电压为-3V,第一晶体管T1处于导通状态,黑画面到白画面的两帧之间和白画面到白画面的两帧之间的第一晶体管T1状态相同,具有显示一致性,避免产生拖影问题。In the embodiment of the present invention, in the initialization phase T1 between two frames from the black picture to the white picture, the voltage of the source of the first transistor T1 is 3V, the voltage of the gate is -3V, and the first transistor T1 is in the conduction state. and between two frames from the white picture to the white picture, the voltage of the source of the first transistor T1 is 3V, the voltage of the gate is -3V, the first transistor T1 is in the conduction state, and the black picture to the white picture The state of the first transistor T1 is the same between the two frames of the white picture and the white picture to the white picture, which has display consistency and avoids the problem of smear.

在数据写入阶段T2,提供与发光器件D1的发光亮度对应的数据信号VDATA。发光控制信号EM和第一扫描信号S1为高电平,第二扫描信号S2为低电平。发光控制信号EM控制第四晶体管T4、第五晶体管T5断开;第一扫描信号S1控制第六晶体管T6、第七晶体管T7断开;第二扫描信号S2控制第二晶体管T2、第三晶体管T3导通,以将数据信号VDATA经由第一晶体管T1的源极和漏极写入第一晶体管T1的栅极。第一晶体管T1的栅极电压逐渐升高,写至VDATA+Vth时,数据写入阶段完成。In the data writing phase T2, the data signal VDATA corresponding to the light emitting brightness of the light emitting device D1 is provided. The emission control signal EM and the first scan signal S1 are at high level, and the second scan signal S2 is at low level. The light emission control signal EM controls the fourth transistor T4 and the fifth transistor T5 to turn off; the first scan signal S1 controls the sixth transistor T6 and the seventh transistor T7 to turn off; the second scan signal S2 controls the second transistor T2 and the third transistor T3 is turned on to write the data signal VDATA into the gate of the first transistor T1 through the source and drain of the first transistor T1 . The gate voltage of the first transistor T1 increases gradually, and when it reaches VDATA+Vth, the data writing phase is completed.

在发光阶段T3,第一扫描信号S1和第二扫描信号S2为高电平,发光控制信号EM为低电平。第一扫描信号S1控制第六晶体管T6、第七晶体管T7断开;第二扫描信号S2控制第二晶体管T2、第三晶体管T3断开;发光控制信号EM控制第四晶体管T4、第五晶体管T5导通,第一晶体管T1的栅极电压为VDATA+Vth,源极电压施加第一电源VDD,从而产生驱动电流,并流入发光器件D1的阳极,驱动发光器件D1发光。In the light-emitting phase T3, the first scan signal S1 and the second scan signal S2 are at high level, and the light-emitting control signal EM is at low level. The first scan signal S1 controls the sixth transistor T6 and the seventh transistor T7 to turn off; the second scan signal S2 controls the second transistor T2 and the third transistor T3 to turn off; the light emission control signal EM controls the fourth transistor T4 and the fifth transistor T5 When it is turned on, the gate voltage of the first transistor T1 is VDATA+Vth, and the source voltage is applied to the first power supply VDD, thereby generating a driving current and flowing into the anode of the light emitting device D1 to drive the light emitting device D1 to emit light.

以上,仅为本发明的具体实施方式,所属领域的技术人员可以清楚地了解到,为了描述的方便和简洁,上述描述的系统、模块和单元的具体工作过程,可以参考前述方法实施例中的对应过程,在此不再赘述。应理解,本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到各种等效的修改或替换,这些修改或替换都应涵盖在本发明的保护范围之内。The above are only specific implementations of the present invention, and those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working process of the above-described systems, modules and units can be referred to in the foregoing method embodiments The corresponding process will not be repeated here. It should be understood that the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present invention, and these modifications or replacements should cover all Within the protection scope of the present invention.

还需要说明的是,本发明中提及的示例性实施例,基于一系列的步骤或者装置描述一些方法或系统。但是,本发明不局限于上述步骤的顺序,也就是说,可以按照实施例中提及的顺序执行步骤,也可以不同于实施例中的顺序,或者若干步骤同时执行。It should also be noted that the exemplary embodiments mentioned in the present invention describe some methods or systems based on a series of steps or devices. However, the present invention is not limited to the order of the above steps, that is, the steps may be performed in the order mentioned in the embodiment, or may be different from the order in the embodiment, or several steps may be performed simultaneously.

Claims (9)

1. An array substrate is characterized by comprising a plurality of pixel circuits distributed in an array and a first signal line electrically connected with each pixel circuit;
the pixel circuit comprises a driving transistor, the driving transistor comprises an active layer, a source drain electrode layer and a grid electrode layer, the source drain electrode layer and the grid electrode layer are arranged on the active layer in an insulating mode, the source drain electrode layer comprises a source electrode and a drain electrode which are mutually insulated, the first signal line is arranged on one side, away from the active layer, of the grid electrode layer, and the projection area of the source electrode on the first signal line is larger than the projection area of the drain electrode on the first signal line;
the maximum distance between the orthographic projection of the source electrode on the active layer and the orthographic projection of the gate electrode on the active layer is larger than the maximum distance between the orthographic projection of the drain electrode on the active layer and the orthographic projection of the gate electrode on the active layer along the extending direction of the first signal line, and a first capacitor is formed between the source electrode and the first signal line.
2. The array substrate of claim 1, wherein a maximum distance between an orthographic projection of the source electrode on the active layer and an orthographic projection of the gate electrode on the active layer in an extending direction along the first signal line is 20 μm to 60 μm.
3. The array substrate of claim 1, wherein the first signal line comprises a high level power signal line or a low level power signal line.
4. The array substrate according to claim 1, further comprising a first insulating layer and a second insulating layer, the first insulating layer being disposed between the active layer and the gate layer in a direction perpendicular to an extending direction of the first signal line and perpendicular to the active layer, the second insulating layer being disposed between the gate layer and the first signal line.
5. The array substrate according to claim 1, wherein a portion of the active layer where the source electrode is projected forward and the first signal line is projected forward is at least one of rectangular and T-shaped.
6. The array substrate according to claim 5, wherein a length of orthographic projection of the source electrode on the first signal line is longer than a length of orthographic projection of the drain electrode on the first signal line in a direction perpendicular to an extending direction of the first signal line and parallel to the active layer;
and/or the width of orthographic projection of the source electrode on the first signal line is larger than the width of orthographic projection of the drain electrode on the first signal line.
7. The array substrate according to claim 1, wherein the active layer includes a channel portion, the channel portion is disposed in a space between the source and the drain, and an orthographic projection of the channel portion on the first signal line and an orthographic projection of the gate layer on the first signal line at least partially overlap.
8. The array substrate according to claim 7, wherein an extended trace of the orthographic projection of the channel portion on the first signal line is one of a straight line and a broken line.
9. A pixel driving circuit, comprising:
a light emitting element;
a driving module for supplying a driving current to the light emitting element;
the storage module is connected with the driving module and used for maintaining the potential of the control end of the driving module;
the data writing module is connected with the driving module and the storage module and is used for writing data signals into the control end of the driving module;
the light-emitting control module is connected with the light-emitting element, the driving module and the power supply voltage input end and used for controlling the light-emitting element to emit light;
the initialization module is connected with the driving module and the light-emitting element and used for initializing the control end of the driving module and the light-emitting element;
the potential difference reducing module is connected with the driving module and the light-emitting control module and is used for reducing the potential difference between the input end of the driving module and the control end of the driving module under the action of a power voltage signal of the power voltage input end, and the potential difference reducing module is a first capacitor in the array substrate according to any one of claims 1 to 8.
CN202110644710.8A 2021-06-09 2021-06-09 Array substrate and pixel driving circuit Active CN113363266B (en)

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CN105336295A (en) * 2014-08-05 2016-02-17 三星显示有限公司 Display apparatus
WO2021102905A1 (en) * 2019-11-29 2021-06-03 京东方科技集团股份有限公司 Display substrate and manufacturing method therefor, and display apparatus
WO2021104481A1 (en) * 2019-11-29 2021-06-03 京东方科技集团股份有限公司 Display substrate and display device

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CN105336295A (en) * 2014-08-05 2016-02-17 三星显示有限公司 Display apparatus
WO2021102905A1 (en) * 2019-11-29 2021-06-03 京东方科技集团股份有限公司 Display substrate and manufacturing method therefor, and display apparatus
WO2021104481A1 (en) * 2019-11-29 2021-06-03 京东方科技集团股份有限公司 Display substrate and display device

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