CN119108436A - A spin wave diode based on an artificial antiferromagnetic structure - Google Patents
A spin wave diode based on an artificial antiferromagnetic structure Download PDFInfo
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- CN119108436A CN119108436A CN202411236658.2A CN202411236658A CN119108436A CN 119108436 A CN119108436 A CN 119108436A CN 202411236658 A CN202411236658 A CN 202411236658A CN 119108436 A CN119108436 A CN 119108436A
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- 230000005418 spin wave Effects 0.000 title claims abstract description 87
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 13
- 230000005291 magnetic effect Effects 0.000 claims abstract description 10
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 7
- 230000001105 regulatory effect Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 43
- 230000000694 effects Effects 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910019236 CoFeB Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 230000005281 excited state Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a spin wave diode based on an artificial antiferromagnetic structure, which comprises the artificial antiferromagnetic structure, a first ferromagnetic material layer, a nanometer insulating layer, a second ferromagnetic material layer and a heavy metal layer, wherein the first ferromagnetic material layer, the nanometer insulating layer, the second ferromagnetic material layer and the heavy metal layer are sequentially arranged from top to bottom, two ends of the second ferromagnetic material layer are not covered by the first ferromagnetic material layer and the nanometer insulating layer, a first integrated coplanar waveguide and a second integrated coplanar waveguide are respectively positioned on the upper surface of the left end and the upper surface of the right end of the second ferromagnetic material layer, one of the first integrated coplanar waveguide and the second integrated coplanar waveguide is used for exciting spin waves, and the other one of the first integrated coplanar waveguide and the second integrated coplanar waveguide is used for detecting the spin waves. The invention can precisely regulate the transmission characteristic of spin waves by regulating the relative orientation of magnetic moment between layers and DM constant, thereby realizing unidirectional transmission performance.
Description
Technical Field
The invention belongs to the technical fields of magnetic materials and spintronics, and particularly relates to a spin wave diode based on an artificial antiferromagnetic structure.
Background
Spintronics is an important area following modern electronics and optoelectronics as an emerging technology. Unlike conventional electronics which rely on electron charges, electron spin and magnetic moment are used to transfer and store information. Spin waves are excited states of magnetism in magnetic materials, have the advantages of waves and particle characteristics, and can be used for logic calculation, reservoir calculation and the like. The transmission of spin waves is based on the exchange of angular momentum and does not require the movement of electrons, so that the transmission loss is small and the generated joule heat is negligible. Meanwhile, spin waves can be excited and detected through coplanar waveguides, spin transfer torque effects, spin orbit torque effects and the like, and are compatible with modern semiconductor processes.
One of the keys to realize a spin wave based chip architecture is to realize a spin wave diode. The method proposed at present is to use a spin wave diode based on domain walls, a chiral Nall wall or a Bloch wall as a spin wave waveguide, and realize unidirectional transmission of spin waves due to non-reciprocity caused by chirality or dipole action of the domain walls, or realize unidirectional transmission of spin waves through complex structural design. Most of these methods are complex in structure, not easy to implement, such as spin-wave domain wall waveguides are difficult to precisely prepare by micro-nano machining, and have a narrow operating bandwidth, mostly at several GHz. In order to solve the problems, a spin wave diode based on artificial antiferromagnetic is provided, the artificial antiferromagnetic has a simple structure and commercial products, the preparation is easy, and the working bandwidth is greatly improved and can reach tens of GHz.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a spin wave diode based on an artificial antiferromagnetic structure. The spin wave diode based on the artificial antiferromagnetic structure is of a four-layer structure composed of two ferromagnetic material (Ferromagnetic Materials, FM) layers, a nanometer insulating layer in the middle and a heavy metal layer Pt at the bottom, and the diode device comprises integrated coplanar waveguides (Coplanar Waveguide, CPW) CPW1 and CPW2 for exciting and receiving spin waves, and the protruding parts at the two ends are used as an excitation end and a receiving end of the spin waves.
Further, the length of the top layer is set to 3000nm, the length of the bottom layer comprises 3300nm, the width of the bottom layer is 80nm, the thickness d of the bottom layer is set to 0.6nm, and the two ends of the model are black strip CPW1 and CPW2 which are used as excitation and detection devices of spin waves.
Further, the diode structure excites spin waves by applying a microwave signal, and the CPW1 excites the CPW2 to detect spin waves or the CPW2 excites the CPW1 to detect spin waves.
Due to the interlayer dipole effect in artificial antiferromagnetic and the DM (Dzyaloshinskii-Moriya) effect of the FM2 layer, the spin wave has nonreciprocal transmission in the FM2 layer, unidirectional transmission occurs in a specific frequency band, and the spin wave amplitude difference in opposite directions is more than two orders of magnitude. The non-reciprocity of spin wave transmission can be further regulated by applying an externally applied magnetic field.
When the DM action constant D is 2mJ/m 2 and the interlayer magnetic moments are antiparallel, the research shows that the spin wave has unidirectional transmission characteristic in the-x direction when the spin wave frequency is between 30GHz and 45GHz, and when the D is changed to-2 mJ/m 2, the spin wave is unidirectional transmitted in the +x direction. And when the interlayer magnetic moments are parallel, spin waves are transmitted bidirectionally.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a spin-wave diode based on an artificial antiferromagnetic structure according to an embodiment of the invention;
FIG. 2 is a dispersion map of spin wave transport in an FM2 layer magnetic layer of an artificial antiferromagnetic structure based spin wave diode provided by an embodiment of the invention;
Fig. 3 is a transmission state of spin waves of the spin wave diode based on the artificial antiferromagnetic structure according to the embodiment of the present invention when t=5ns is an FM2 layer, and the spin wave frequency is 30GHz;
FIG. 4 is a graph of a transmission mode of spin waves in an FM2 layer when a DM action constant D is 2mJ/m 2 and-2 mJ/m 2, and the spin wave frequency is 30GHz.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
A diode according to the present invention based on spin wave unidirectional transmission characteristics is described below with reference to fig. 1, including:
The embodiment of the invention provides a spin wave diode based on an artificial antiferromagnetic structure, which is an artificial antiferromagnetic structure with a four-layer structure consisting of two ferromagnetic material FM layers, a middle nanometer insulating layer and a bottom heavy metal layer Pt. Wherein the FM layer is typically CoFeB, the insulating layer is typically MgO, and other materials may be used. The diode device comprises integrated coplanar waveguides CPW1 and CPW2 for exciting and receiving spin waves, wherein protruding parts at two ends are used as an excitation end and a receiving end of the spin waves, the spin waves are excited and detected through the coplanar waveguides, the CPW1 excites the CPW2 to detect the spin waves, or the CPW2 excites the CPW1 to detect the spin waves.
The length of the top layer is set to 3000nm, the length of the bottom layer containing an excitation end and a receiving end is set to 3300nm, the width is 80nm, and the thickness d is set to 0.6nm. The two ends of the model are black long-strip CPW1 and CPW2 as excitation and detection devices of spin waves.
Due to the interlayer dipole effect in artificial antiferromagnetic and the DM effect of the FM2 layer, the spin wave exhibits nonreciprocal transmission in the FM2 layer and unidirectional transmission in a specific frequency band, and the spin wave amplitude difference in opposite directions is two orders of magnitude or more, as shown in fig. 2. By applying an external magnetic field, the non-reciprocity of spin wave transmission can be further regulated, and the unidirectional transmission characteristic of spin waves is enhanced.
The invention mainly researches unidirectional transmission of spin waves in an FM2 layer of a bottom magnetic layer, wherein the DM action constant D is 2mJ/M 2, the saturation magnetization M s is 680kA/M, and the damping coefficient alpha is 0.01. Excitation spin wave is applied to the middle position of the model FM2 layer, the frequency is 30GHz, the transmission process of the spin wave at a certain moment is shown in figure 3, the spin wave can be clearly seen to be transmitted unidirectionally along the-x direction, and the spin wave amplitude in the +x direction is different from the spin wave amplitude in the-x direction by more than 2 orders of magnitude.
The positive and negative of the DM action constant are changed, the dispersion curve is changed symmetrically, and the spin wave is changed from unidirectional transmission in the-x direction to unidirectional transmission in the +x direction, so that the unidirectional transmission direction of the spin wave can be regulated by regulating the positive and negative of D.
When D is more than 0, spin wave is unidirectionally transmitted along the-x direction, so spin wave can only be excited by CPW2 port, CPW1 port is received, when D is less than 0, spin wave is unidirectionally transmitted along +x direction, so spin wave can only be excited by CPW1 port, CPW2 port is received, and on-off of spin wave diode is realized. When D is 2mJ/m 2 and-2 mJ/m 2 respectively, the transmission mode diagram of the excited spin wave at the left and right ends is shown in FIG. 4, and the structure has spin wave unidirectional conduction characteristic and is a typical spin wave diode.
It should be noted that the above-mentioned embodiments are merely for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to the above-mentioned embodiments, it should be understood by those skilled in the art that the technical solution described in the above-mentioned embodiments may be modified or some technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the spirit and scope of the technical solution of the embodiments of the present invention.
Claims (6)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235119A (en) * | 2006-02-03 | 2007-09-13 | Kyoto Univ | Ferromagnetic wire |
| US20170222135A1 (en) * | 2014-08-08 | 2017-08-03 | Tohoku University | Magnetoresistance effect element and magnetic memory device |
| CN108780779A (en) * | 2016-06-10 | 2018-11-09 | Tdk株式会社 | Exchange biased utilization type magnetization inversion element, exchange biased utilization type magneto-resistance effect element, exchange biased utilization type magnetic memory, non-volatile logic circuit and magnetic neuron element |
| CN113363377A (en) * | 2021-05-18 | 2021-09-07 | 杭州电子科技大学 | Microwave oscillator based on ferromagnetic skynerger chiral conversion |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007235119A (en) * | 2006-02-03 | 2007-09-13 | Kyoto Univ | Ferromagnetic wire |
| US20170222135A1 (en) * | 2014-08-08 | 2017-08-03 | Tohoku University | Magnetoresistance effect element and magnetic memory device |
| CN108780779A (en) * | 2016-06-10 | 2018-11-09 | Tdk株式会社 | Exchange biased utilization type magnetization inversion element, exchange biased utilization type magneto-resistance effect element, exchange biased utilization type magnetic memory, non-volatile logic circuit and magnetic neuron element |
| CN113363377A (en) * | 2021-05-18 | 2021-09-07 | 杭州电子科技大学 | Microwave oscillator based on ferromagnetic skynerger chiral conversion |
Non-Patent Citations (1)
| Title |
|---|
| KRZYSZTOF SZULC, ET AL: "Spin-Wave Diode and Circulator Based on Unidirectional Coupling", 《PHYS. REV. APPLIED》, vol. 14, no. 3, 25 September 2020 (2020-09-25), pages 034063 - 1 * |
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