CN101882756A - Fabrication method of polyimide buried double-groove-ridge device channel - Google Patents
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 43
- 229920001721 polyimide Polymers 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 238000000206 photolithography Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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Abstract
一种聚酰亚胺填埋双沟脊型器件沟道的制作方法，包括如下步骤：步骤1：在衬底的表面依次生长有源层和限制层，作为器件的基本结构；步骤2：在限制层的表面制作光刻图形；步骤3：光刻，在限制层的表面刻蚀出双沟脊型结构，刻蚀深度到达有源层的表面；步骤4：在双沟脊型结构内及限制层的表面涂聚酰亚胺介质层，预固化；步骤5：在聚酰亚胺介质层的表面涂光刻胶，烘干；步骤6：曝光，显影去掉双沟脊型结构上的及限制层表面的聚酰亚胺介质层，固化，完成器件的制作。
A method for making a polyimide-filled double-groove-ridge type device channel, comprising the following steps: Step 1: growing an active layer and a confinement layer sequentially on the surface of a substrate as the basic structure of the device; Step 2: Make photolithographic patterns on the surface of the confinement layer; step 3: photolithography, etch a double-groove ridge structure on the surface of the confinement layer, and the etching depth reaches the surface of the active layer; step 4: in the double-groove ridge structure and The surface of the limiting layer is coated with a polyimide dielectric layer and pre-cured; step 5: coating a photoresist on the surface of the polyimide dielectric layer and drying; step 6: exposing and developing to remove the The polyimide dielectric layer on the surface of the limiting layer is cured to complete the fabrication of the device.
Description
技术领域technical field
本发明属于半导体器件制作光刻工艺技术领域，特别是聚酰亚胺填埋双沟脊型器件沟道的制作方法，可以提高器件的高频性能。通过控制显影速率，完成此项疑难工艺。The invention belongs to the technical field of photolithography technology for manufacturing semiconductor devices, in particular to a method for manufacturing polyimide-filled double-groove-ridge-type device channels, which can improve the high-frequency performance of the device. By controlling the development rate, this difficult process is completed.
背景技术Background technique
伴随着光通讯技术的飞速发展，对光电子器件的带宽要求越来越高。不但要优化器件结构，还要创新介质制作工艺以降低电容。比如波长1.5um脊形波导型高频激光器，要求在有源层1.5um条型台面两边的各7um沟道内填埋聚酰亚胺，其它地方去掉，尤其1.5um条型台面顶部不能有残留，传统的光刻工艺较难满足。本发明聚酰亚胺填埋双沟脊型器件结构的沟道工艺，满足了此工艺要求。With the rapid development of optical communication technology, the bandwidth requirements of optoelectronic devices are getting higher and higher. It is not only necessary to optimize the device structure, but also to innovate the dielectric manufacturing process to reduce capacitance. For example, for a ridge waveguide high-frequency laser with a wavelength of 1.5um, it is required to bury polyimide in each 7um channel on both sides of the 1.5um strip-shaped mesa in the active layer, and remove it elsewhere, especially the top of the 1.5um strip-shaped mesa. The traditional photolithography process is difficult to meet. The channel technology of the polyimide-filled double-groove-ridge device structure of the present invention meets the requirement of the technology.
发明内容Contents of the invention
本发明目的在于提供一种聚酰亚胺填埋双沟脊型器件沟道的制作方法，其避免了单独去胶时溶液对聚酰亚胺图形的破坏。本发明在半导体激光器高频器件制作工艺中，简化了光刻工艺中繁琐的套刻工艺。The purpose of the present invention is to provide a polyimide-buried double-groove-ridge-type device channel manufacturing method, which avoids the damage to the polyimide pattern by the solution when the glue is removed alone. The invention simplifies the cumbersome overlay process in the photoetching process in the manufacturing process of the semiconductor laser high-frequency device.
本发明提供一种聚酰亚胺填埋双沟脊型器件沟道的制作方法，包括如下步骤：The invention provides a method for making a polyimide-filled double-groove-ridge type device channel, comprising the following steps:
步骤1：在衬底的表面依次生长有源层和限制层，作为器件的基本结构；Step 1: growing an active layer and a confinement layer sequentially on the surface of the substrate as the basic structure of the device;
步骤2：在限制层的表面制作光刻图形；Step 2: making a photolithography pattern on the surface of the confinement layer;
步骤3：光刻，在限制层的表面刻蚀出双沟脊型结构，刻蚀深度到达有源层的表面；Step 3: Photolithography, etching a double-groove-ridge structure on the surface of the confinement layer, and the etching depth reaches the surface of the active layer;
步骤4：在双沟脊型结构内及限制层的表面涂聚酰亚胺介质层，预固化；Step 4: Coating a polyimide dielectric layer in the double groove ridge structure and the surface of the limiting layer, and pre-curing;
步骤5：在聚酰亚胺介质层的表面涂光刻胶，烘干；Step 5: Coating photoresist on the surface of the polyimide dielectric layer and drying;
步骤6：曝光，显影去掉双沟脊型结构上的及限制层表面的聚酰亚胺介质层，固化，完成器件的制作。Step 6: exposing and developing, removing the polyimide dielectric layer on the double-groove-ridge structure and the surface of the limiting layer, curing, and completing the fabrication of the device.
其中步骤4所述的聚酰亚胺介质层是采用ZKPI-305II型聚酰亚胺。Wherein the polyimide medium layer described in step 4 adopts ZKPI-305II type polyimide.
其中步骤4所述的预固化的时间为20-40分钟，使用台式电热干燥箱，固化的温度为110-120℃。The pre-curing time described in step 4 is 20-40 minutes, and the curing temperature is 110-120° C. using a desktop electric drying oven.
其中步骤5所述的涂光刻胶的型号为S9912正性光刻胶。Wherein the model of the photoresist coated in step 5 is S9912 positive photoresist.
其中步骤5所述的烘干的温度为90-100℃，烘干的时间为15-20分钟，使用台式电热干燥箱。Wherein the drying temperature described in step 5 is 90-100° C., and the drying time is 15-20 minutes, using a desktop electric drying oven.
其中步骤6所述的固化是在通入N2的高温炉内进行，其固化温度及时间为阶梯式，先150℃/60分钟，再180℃/30分钟，最后250℃/60分钟，使聚酰亚胺固化完全。Wherein the curing described in step 6 is carried out in a high-temperature furnace that feeds N2 , and its curing temperature and time are stepped, first 150°C/60 minutes, then 180°C/30 minutes, and finally 250°C/60 minutes, so that Polyimide is fully cured.
附图说明Description of drawings
为进一步说明本发明的技术特征，以下结合附图及实施例详细说明如后，其中：In order to further illustrate the technical characteristics of the present invention, the following detailed description is as follows in conjunction with the accompanying drawings and embodiments, wherein:
图1(a)-图1(e)为本发明的制作流程图。Fig. 1(a)-Fig. 1(e) are the production flowchart of the present invention.
具体实施方式Detailed ways
请参阅图1(a)-图1(e)为本发明的制作流程图。本发明提供一种聚酰亚胺填埋双沟脊型器件沟道的制作方法，包括如下步骤：Please refer to Fig. 1(a)-Fig. 1(e) for the production flow chart of the present invention. The invention provides a method for making a polyimide-filled double-groove-ridge type device channel, comprising the following steps:
步骤1：在衬底10的表面上生长有源层20和限制层30，通常用MOCVD生长技术；Step 1: growing an active layer 20 and a confinement layer 30 on the surface of the substrate 10, usually using MOCVD growth technology;
步骤2：在限制层30的表面制作光刻图形；Step 2: making a photolithography pattern on the surface of the confinement layer 30;
步骤3：光刻，在限制层30的表面刻蚀出双沟脊型结构，刻蚀深度到达有源层20的表面；一般用选择性腐蚀液，如HCL系只对限制层30有腐蚀作用，而对有源层20没有腐蚀作用；Step 3: photolithography, etch a double groove and ridge structure on the surface of the limiting layer 30, and the etching depth reaches the surface of the active layer 20; generally, a selective etching solution is used, such as the HCL system, which only has an etching effect on the limiting layer 30 , and has no corrosion effect on the active layer 20;
步骤4：在双沟脊型结构内及限制层30的表面涂聚酰亚胺介质层40，预固化；预固化的时间为20-40分钟，使用台式电热干燥箱，固化的温度为110-120℃；Step 4: Coat the polyimide dielectric layer 40 in the double-groove ridge structure and the surface of the limiting layer 30 for pre-curing; the pre-curing time is 20-40 minutes, using a desktop electric drying oven, and the curing temperature is 110- 120°C;
步骤5：在聚酰亚胺介质层40的表面涂光刻胶50，烘干；光刻胶50的型号为S9912正性光刻胶；温度为90-100℃，烘干的时间为15-20分钟，使用台式电热干燥箱。Step 5: Apply photoresist 50 on the surface of polyimide dielectric layer 40, and dry it; the type of photoresist 50 is S9912 positive photoresist; the temperature is 90-100°C, and the drying time is 15- 20 minutes, using a desktop electric oven.
步骤6：曝光，显影去掉双沟脊型结构上的及限制层30表面的聚酰亚胺介质层40，用显微镜观察双沟脊型的中间脊上的聚酰亚胺介质层40必须去掉，否则，器件将不通；固化，在通入N2的高温炉内进行，其固化温度及时间为阶梯式，先150℃/60分钟，再180℃/30分钟，最后250℃/60分钟，使聚酰亚胺固化完全。根据实际情况，温度可升至350℃保持30分钟，完成聚酰亚胺填埋双沟脊型器件沟道的制作。一般情况下，双沟脊型器件沟道聚酰亚胺固化后比固化前要低一些，是正常的，这是由于固化将聚酰亚胺水分蒸发所致。Step 6: Exposure and development remove the polyimide dielectric layer 40 on the double-groove ridge structure and the surface of the confinement layer 30, observe with a microscope that the polyimide dielectric layer 40 on the middle ridge of the double-groove ridge type must be removed, Otherwise, the device will not work; curing is carried out in a high-temperature furnace fed with N2 , and the curing temperature and time are stepped, first at 150°C/60 minutes, then at 180°C/30 minutes, and finally at 250°C/60 minutes, so that Polyimide is fully cured. According to the actual situation, the temperature can be raised to 350°C and kept for 30 minutes to complete the fabrication of the polyimide-filled double-groove-ridge device channel. Under normal circumstances, it is normal that the channel polyimide of the double-groove ridge device is lower than before curing, which is due to the evaporation of polyimide water during curing.
步骤7：此步骤根据器件电极位置情况来决定是否需要，如电极接触点大于沟道内聚酰亚胺面积时，可生长一层SiO2，再通过常规光刻技术将双沟脊型的中间脊上的SiO2去掉，就可制作任意大小的电极点了。Step 7: This step determines whether it is necessary according to the position of the device electrode. For example, when the electrode contact point is larger than the area of polyimide in the channel, a layer of SiO 2 can be grown, and then the double-groove-ridge-type middle ridge can be formed by conventional photolithography technology. Remove the SiO 2 on the surface, and you can make electrode points of any size.
实施案例Implementation case
以波长1.5um双沟脊形激光器为例，实施本发明的聚酰亚胺填埋双沟脊型器件沟道的制作方法后，操作如下：Taking a double-groove ridge laser with a wavelength of 1.5um as an example, after implementing the manufacturing method of the polyimide-filled double-groove ridge device channel of the present invention, the operation is as follows:
步骤1：在衬底10的表面生长有源层20和限制层30；Step 1: growing an active layer 20 and a confinement layer 30 on the surface of the substrate 10;
步骤2：在限制层30的表面制作光刻图形；Step 2: making a photolithography pattern on the surface of the confinement layer 30;
步骤3：光刻，在限制层30的表面刻蚀出双沟脊型结构，刻蚀深度到达有源层20的表面；Step 3: photolithography, etching a double-groove-ridge structure on the surface of the confinement layer 30, and the etching depth reaches the surface of the active layer 20;
步骤4：在双沟脊型结构内及限制层30的表面涂聚酰亚胺介质层40，预固化；预固化的时间为20-40分钟，使用台式电热干燥箱，固化的温度为110-120℃；Step 4: Coat the polyimide dielectric layer 40 in the double-groove ridge structure and the surface of the limiting layer 30 for pre-curing; the pre-curing time is 20-40 minutes, using a desktop electric drying oven, and the curing temperature is 110- 120°C;
步骤5：在聚酰亚胺介质层40的表面涂光刻胶50，烘干；光刻胶50的型号为S9912正性光刻胶；温度为90-100℃，烘干的时间为15-20分钟，使用台式电热干燥箱。Step 5: Apply photoresist 50 on the surface of polyimide dielectric layer 40, and dry it; the type of photoresist 50 is S9912 positive photoresist; the temperature is 90-100°C, and the drying time is 15- 20 minutes, using a desktop electric oven.
步骤6：曝光，显影去掉双沟脊型结构上的及限制层30表面的聚酰亚胺介质层40，用显微镜观察双沟脊型的中间脊上的聚酰亚胺介质层40必须去掉，否则，器件将不通；固化，在通入N2的高温炉内进行，其固化温度及时间为，150℃/60分钟、180℃/30分钟、250℃/60分钟，根据实际情况，可升至350℃保持30分钟，使聚酰亚胺固化完全；完成聚酰亚胺填埋双沟脊型器件沟道的制作。Step 6: Exposure and development remove the polyimide dielectric layer 40 on the double-groove ridge structure and the surface of the confinement layer 30, observe with a microscope that the polyimide dielectric layer 40 on the middle ridge of the double-groove ridge type must be removed, Otherwise, the device will not work; curing is carried out in a high-temperature furnace fed with N 2 , the curing temperature and time are 150°C/60 minutes, 180°C/30 minutes, 250°C/60 minutes, according to the actual situation, it can be increased Keep at 350°C for 30 minutes to completely cure the polyimide; complete the fabrication of the polyimide-filled double-groove-ridge device channel.
以上所述，仅为本发明中的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉该技术的人在本发明所揭露的技术范围内，可轻易想到的变换或替换，都应涵盖在本发明的包含范围之内。因此，本发明的保护范围应该以权利要求书的保护范围为准。The above is only a specific implementation mode in the present invention, but the scope of protection of the present invention is not limited thereto. Anyone familiar with the technology can easily think of changes or replacements within the technical scope disclosed in the present invention. All should be covered within the scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
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| CN108169851A (en) * | 2018-01-09 | 2018-06-15 | 河南仕佳光子科技股份有限公司 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
| CN109216162A (en) * | 2018-08-29 | 2019-01-15 | 中国科学院上海微系统与信息技术研究所 | Semiconductor structure and preparation method thereof |
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