CN109251671B - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN109251671B CN109251671B CN201710569718.6A CN201710569718A CN109251671B CN 109251671 B CN109251671 B CN 109251671B CN 201710569718 A CN201710569718 A CN 201710569718A CN 109251671 B CN109251671 B CN 109251671B
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- 238000005498 polishing Methods 0.000 title claims abstract description 79
- 239000000126 substance Substances 0.000 title claims abstract description 15
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 20
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 11
- 229920001223 polyethylene glycol Polymers 0.000 claims description 14
- 239000003112 inhibitor Substances 0.000 claims description 13
- 239000002202 Polyethylene glycol Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- -1 polyoxyethylene lauryl ether Polymers 0.000 claims description 7
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 claims description 7
- 229920000053 polysorbate 80 Polymers 0.000 claims description 7
- 229920000191 poly(N-vinyl pyrrolidone) Polymers 0.000 claims description 6
- IDOQDZANRZQBTP-UHFFFAOYSA-N 2-[2-(2,4,4-trimethylpentan-2-yl)phenoxy]ethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=CC=C1OCCO IDOQDZANRZQBTP-UHFFFAOYSA-N 0.000 claims description 5
- IEQAICDLOKRSRL-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-dodecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO IEQAICDLOKRSRL-UHFFFAOYSA-N 0.000 claims description 5
- 229920004929 Triton X-114 Polymers 0.000 claims description 5
- 229920004890 Triton X-100 Polymers 0.000 claims description 4
- 239000013504 Triton X-100 Substances 0.000 claims description 4
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 229920001983 poloxamer Polymers 0.000 claims description 2
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 claims description 2
- ZPIRTVJRHUMMOI-UHFFFAOYSA-N octoxybenzene Chemical compound CCCCCCCCOC1=CC=CC=C1 ZPIRTVJRHUMMOI-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 35
- 229920005591 polysilicon Polymers 0.000 abstract description 32
- 239000002245 particle Substances 0.000 abstract description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000002002 slurry Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 description 2
- 229920002582 Polyethylene Glycol 600 Polymers 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 2
- 239000012088 reference solution Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- HQPMKSGTIOYHJT-UHFFFAOYSA-N ethane-1,2-diol;propane-1,2-diol Chemical compound OCCO.CC(O)CO HQPMKSGTIOYHJT-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001993 poloxamer 188 Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, which comprises sol type cerium oxide, a hydroxyl-containing nonionic surfactant and a pH regulator. The invention adopts the technical scheme that sol type cerium oxide grinding particles and a hydroxyl-containing nonionic surfactant are matched for use, and the selection ratio of silicon oxide to polysilicon is improved under the condition that the polishing rate of the silicon oxide is hardly reduced under the condition of a certain pH value.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution adopting a cerium oxide abrasive.
Background
Cerium oxide is an important CMP slurry abrasive, has more efficient polishing characteristics to silica materials than conventional silica sol abrasives, and has been widely used in CMP of ILD (Inter-layer dielectric) and sti (shallow trench isolation). Among them, in the chemical mechanical polishing process of STI, it is required to remove silicon oxide and stay on silicon nitride, and thus, the CMP slurry for STI is required to achieve a high silicon oxide material Removal Rate (RR) and a low silicon nitride removal rate. I.e., a high silicon oxide to silicon nitride removal rate ratio, which is also referred to as oxide to nitride selectivity over the CMP process. Recently, polysilicon has begun to be used as a barrier layer material in semiconductor fabrication processes instead of silicon nitride. Accordingly, there is a need in the art for a CMP slurry having a high silicon oxide removal rate, a low polysilicon removal rate, i.e., a high silicon oxide to polysilicon selectivity, to meet the needs of semiconductor manufacturing processes. Known patents, such as US 8,691,695B 2, disclose that in a polishing slurry with silicon oxide as abrasive particles, acetylene glycol (Surfynol 104) can suppress the polishing rate of polysilicon to 55%. US 6,626,968B 2 discloses that in a polishing liquid in which cerium oxide is used as abrasive particles, polyvinyl methyl ether (PVME), polyethylene glycol (PEG), polyoxyethylene lauryl ether (POLE), polypropionic acid (PPA), polyacrylic acid (PAA), polyethylene glycol monoether (PEGBE) can suppress the polishing rate of polysilicon, but the selectivity of silicon oxide to polysilicon does not exceed 50. Us.pat. Application No.2013/01718 a1 discloses that in a polishing liquid in which cerium oxide is used as abrasive grains, a polyvinylamine-based polymer can increase the selectivity ratio of silicon oxide to polysilicon by more than 50 but not more than 120.
Disclosure of Invention
The research of the invention finds that the nonionic surfactant containing hydroxyl groups and ether groups can inhibit the polishing rate of polycrystalline silicon from being higher than 100 times, improve the selection ratio of silicon oxide to the polycrystalline silicon to be more than 120 and even more than 700, and simultaneously reduce the polishing rate of the silicon oxide little or hardly. Therefore, the present invention provides a chemical mechanical polishing solution, which selects sol type cerium oxide as abrasive particles, and can improve the selectivity of silicon oxide to polysilicon under the condition of hardly reducing the polishing rate of silicon oxide in a certain pH range by adding a nonionic surfactant containing a hydroxyl group and an ether group.
The chemical mechanical polishing solution provided by the invention comprises sol type cerium oxide, a hydroxyl-containing nonionic surfactant and a pH regulator.
Wherein the hydroxyl-containing nonionic surfactant is Tween-80 (polyoxyethylene sorbitan monooleate, CAS:9005-65-6), Triton X-100 (polyoxyethylene octyl phenyl ether, CAS: 9002-93-1), Brij-35 (polyoxyethylene lauryl ether, CAS:9002-92-0), Triton X-114 (polyoxyethylene mono-tert-octyl phenyl ether, CAS:9036-19-5), F68 (Pluronic, CAS: 9003-11-6), O-20 (peregal O-20, CAS:9002-92-0), O-30 (peregal O-30, 9002-92-0), and O-50 (peregal O-50, CAS: 9002-92-0). Specifically, the structural formula is as follows:
preferably, the sol-type cerium oxide is contained in an amount of 0.1 to 1.0 wt%.
Preferably, the pH adjusting agent is selected from potassium hydroxide or nitric acid.
Preferably, the pH value of the chemical mechanical polishing solution is 4.0-5.0
Preferably, the chemical mechanical polishing solution further comprises a silicon nitride inhibitor and a butterfly-shaped depression inhibitor.
Compared with the prior art, the invention has the technical advantages that: the invention adopts the technical scheme that sol type cerium oxide abrasive particles and a hydroxyl-containing nonionic surfactant are matched for use, and under the condition of certain pH, the selection ratio of silicon oxide to polysilicon is improved under the condition that the polishing rate of the silicon oxide is hardly reduced, so that the selection ratio reaches more than 120 and even can exceed 700.
Detailed Description
The following detailed description of the invention is provided in conjunction with the following tables and examples.
Example 1:
in this example, a hydroxyl group-containing compound such as ethylene glycol, polyethylene glycol diacid (abbreviated as PEGDA-600, molecular weight 600), Tween-80, triton x-100, Brij-35, having the following molecular formula:
the silicon oxide and the polysilicon are polished by adding the silicon nitride inhibitor and the butterfly recess (deforming) inhibitor into the polishing solution of the cerium oxide as a nonionic surfactant.
Specifically, in this embodiment, the reference liquid is a composition including a silicon nitride inhibitor and a dishing (dishing) inhibitor, and based on the above reference liquid, sol-type cerium oxide abrasive particles with different contents and different types of nonionic surfactants with different contents are added according to the data in table 1, and the pH is adjusted with potassium hydroxide (KOH) or nitric acid (HNO3), so as to obtain the respective proportions and examples in table 1, as shown in table 1. Wherein, polyethylene glycol is abbreviated as PEG-10k (molecular weight: 10,000), PEG-1k (molecular weight: 1,000), PEG-600 (molecular weight: 600), PEG-200 (molecular weight: 200); polyethylene glycol diacid is abbreviated as PEGDA-600 (molecular weight 600).
Then, the polishing performance of the polishing solution was evaluated by the removal rate of silicon oxide (TEOS) and polysilicon (polySi) blank wafers, and the specific polishing effects were obtained as shown in table 1. Wherein, choose Mirra polishing machine to carry out the polishing test, correspond polishing conditions and include: the IC1010 polishing pad, Platen and Carrier were rotated at 93rpm and 87rpm, respectively, at 3psi and 4psi, with a slurry flow rate of 150mL/min and a polishing time of 60 seconds. The TEOS polishing rate was calculated by measuring the values before and after the TEOS film thickness. TEOS and polySi film thicknesses were measured using a NanoSpec film thickness measuring system (NanoSpec6100-300, Shanghai NanoSpec Technology Corporation). Starting 3mm from the edge of the wafer, 49 points were measured on the diameter line at equal intervals. The polishing rate was an average of 49 points.
Table 1: effect of nonionic surfactants on TEOS and polySi polishing rates
The results in table 1 show that in this example, ethylene glycol, polyethylene glycols of different molecular weights, and polyethylene glycol diacid all have inhibitory effects on the polishing rate of polysilicon, but have little effect on the polishing rate of silicon oxide, not more than 15%. However, the polishing rate of polysilicon is reduced by not more than 90%, and the selection ratio of silicon oxide to polysilicon is not more than 33. However, the polishing rate of the polysilicon, particularly Brij-35, can be further inhibited by Tween-80, Triton X-100 and Brij-35, the polishing rate of the polysilicon can be inhibited to 97% at 100ppm and 99% at 1000ppm, and the polishing rate of the silicon oxide is not affected, so that the selection ratio of the silicon oxide to the polysilicon is higher than 120 and reaches 765. By proper concentration adjustment, Tween-80 and Triton X-100 can also achieve high silicon oxide rate and high selectivity.
Example 2:
in this example, Triton X-114, F68, O-20, O-30 and O-50 were selected as the nonionic surfactants, and the molecular structural formula is shown below:
silicon oxide and polysilicon are polished by adding to a polishing slurry of cerium oxide containing no silicon nitride inhibitor but containing a dishing inhibitor. Wherein F68 is Pluronic F68 from BASF corporation; o-20, O-30 and O-50 are emulsifiers O series in the petroleum chemical plant Haian of Jiangsu province. In addition, the polishing solutions added with ethylene glycol, polyethylene glycol with different molecular weights and polyethylene glycol diacid are taken as comparison.
In this embodiment, the reference liquid is a composition containing a butterfly recess (discing) inhibitor, and based on the above reference liquid, different contents of sol-type cerium oxide abrasive particles and different contents of different types of nonionic surfactants are added according to the data in table 1, and the pH is adjusted by potassium hydroxide (KOH) or nitric acid (HNO3), so as to obtain the respective proportions and examples in table 2. Among them, ethylene glycol is abbreviated as PEG-10k (molecular weight: 10,000), PEG-1k (molecular weight: 1,000), PEG-600 (molecular weight: 600), and PEG-200 (molecular weight: 200). Polyethylene glycol diacid is abbreviated as PEGDA-600 (molecular weight 600).
The polishing performance of the polishing solution in this example was evaluated by the removal rate of polishing corresponding to silicon oxide (TEOS) and polysilicon (polySi) blank wafers. Wherein, choose Mirra polishing machine to carry out the polishing test, correspond polishing conditions and include: the IC1010 polishing pad, Platen and Carrier were rotated at 93rpm and 87rpm, respectively, at a pressure of 3psi, a slurry flow rate of 150mL/min, and a polishing time of 60 seconds. The TEOS polishing rate was calculated by measuring the values before and after the TEOS film thickness. TEOS and polySi film thicknesses were measured using a NanoSpec film thickness measuring system (NanoSpec6100-300, Shanghai NanoSpec Technology Corporation). Starting 3mm from the edge of the wafer, 49 points were measured on the diameter line at equal intervals. The polishing rate was an average of 49 points. The specific polishing results are shown in tables 2 and 3:
table 2: effect of nonionic surfactants on TEOS and polySi polishing rates
Table 3: effect of O-20 on TEOS and polySi polishing rates at different pH and cerium oxide solids
The results in Table 2 are similar to those in Table 1, and ethylene glycol, polyethylene glycols of different molecular weights, polyethylene glycol diacid all have an inhibitory effect on the polishing rate of polysilicon, and have little effect on the polishing rate of silicon oxide, not more than 15%. However, the polishing rate of polysilicon is reduced by not more than 90%, and the selectivity ratio of silicon oxide to polysilicon is not more than 28. However, with Triton X-114, F68 and O-20, O-30 and O-50, the polishing rate of polysilicon can be further suppressed to almost complete suppression, while the influence on the rate of silicon oxide is small, not more than 15%, so that the selectivity of silicon oxide to polysilicon is much higher than 120. The results in Table 3 show that O-20 has good Poly-Si polishing inhibition effect in the range of 0.1 wt% to 1.0 wt% of the cerium oxide solid content, corresponding to a pH range of 4.0 to 5.0, while having little effect on the TEOS polishing rate.
Example 3:
in this example, Air Products such as Surfynol-104E, Dynol-810 and Carbowet GA-100 were selected as the hydroxyl-containing nonionic surfactant. Silicon oxide and polysilicon are polished by adding the silicon oxide and the cerium oxide into a polishing solution which does not contain a silicon nitride inhibitor and does not contain a dishing inhibitor. The reference solution in this example contains a sol-type cerium oxide, and the concentration thereof is fixed to 0.2 wt%, and a composition in which the pH is adjusted to 4.5 with potassium hydroxide (KOH) or nitric acid (HNO3) is used. In other comparative examples and examples, nonionic surfactants were added to the reference solutions at different concentrations, as shown in table 4.
The polishing performance of the polishing solution is evaluated by polishing removal rates corresponding to silicon oxide (TEOS) and polysilicon (polySi) blank wafers, a Mirra polishing machine is selected for polishing test, and the corresponding polishing conditions comprise: the IC1010 polishing pad, Platen and Carrier were rotated at 93rpm and 87rpm, respectively, at 4psi and 5psi, with a slurry flow rate of 150mL/min and a polishing time of 60 seconds. The TEOS polishing rate was calculated by measuring the values before and after the TEOS film thickness. TEOS and polySi film thicknesses were measured using a NanoSpec film thickness measuring system (NanoSpec6100-300, Shanghai NanoSpec Technology Corporation). Starting 3mm from the edge of the wafer, 49 points were measured on the diameter line at equal intervals. The polishing rate was an average of 49 points. The results are shown in table 4 below:
table 4: effect of different organic Compounds on TEOS and PolySi polishing rates
The results in Table 4 show that GA-100, Dynol-810, and Surfynol-104E all have an inhibitory effect on the polishing rate of polysilicon, and have little effect on the polishing rate of silicon oxide, not more than 15%. However, the polishing rate of polysilicon is reduced by not more than 96%, and the selectivity ratio of silicon oxide to polysilicon is not more than 48. However, the polishing rate of the polysilicon can be further inhibited by using Triton X-114, F68, O-20, O-30 and O-50, almost complete inhibition is achieved, and meanwhile, the influence on the rate of the silicon oxide is small and is not more than 15%, so that the selection ratio of the silicon oxide to the polysilicon is far higher than the adding effect of additives such as GA-100, Dynol-810, Surfynol-104E and the like.
It should be noted that the embodiments of the present invention have been described in terms of preferred embodiments, and not by way of limitation, and that those skilled in the art can make modifications and variations of the embodiments described above without departing from the spirit of the invention.
Claims (3)
1. The chemical mechanical polishing solution is characterized by comprising sol type cerium oxide, a hydroxyl-containing nonionic surfactant and a pH regulator;
the sol type cerium oxide content is 0.1-1.0 wt%;
the pH value of the chemical mechanical polishing solution is 4.0-5.0;
the hydroxyl-containing nonionic surfactant is Tween-80 (polyoxyethylene sorbitan monooleate), Triton X-100 (polyethylene glycol octyl phenyl ether), Brij-35 (polyoxyethylene lauryl ether), Triton X-114 (polyoxyethylene mono-tert-octyl phenyl ether), F68 (Pluronic), O-20 (peregal O-20), O-30 (peregal O-30) and O-50 (peregal O-50).
2. The chemical mechanical polishing solution according to claim 1, wherein the pH adjusting agent is selected from potassium hydroxide or nitric acid.
3. The chemical mechanical polishing solution according to any one of claims 1 to 2, further comprising a silicon nitride inhibitor and a dishing inhibitor.
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| CN201710569718.6A CN109251671B (en) | 2017-07-13 | 2017-07-13 | Chemical mechanical polishing solution |
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| CN113004797B (en) * | 2019-12-19 | 2024-04-12 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN113004796A (en) * | 2019-12-19 | 2021-06-22 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN111775354B (en) * | 2020-06-19 | 2021-10-01 | 山东省科学院新材料研究所 | A kind of processing method of potassium tantalum niobate single crystal substrate element |
| CN116333599A (en) * | 2021-12-23 | 2023-06-27 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application method thereof |
| CN115491129A (en) * | 2022-06-20 | 2022-12-20 | 深圳市永霖科技有限公司 | Chemical mechanical polishing solution containing zwitterionic surface active ingredients |
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|---|---|---|---|---|
| CN101096576A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Algae removing type polishing liquid |
| CN101511538A (en) * | 2006-09-15 | 2009-08-19 | 日立化成工业株式会社 | CMP polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution |
| US8314028B2 (en) * | 2006-09-28 | 2012-11-20 | Samsung Electronics Co., Ltd. | Slurry compositions and methods of polishing a layer using the slurry compositions |
| CN106566412A (en) * | 2015-09-25 | 2017-04-19 | 气体产品与化学公司 | Stop-on silicon containing layer additive |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821309B2 (en) * | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
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- 2017-07-13 CN CN201710569718.6A patent/CN109251671B/en active Active
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| CN101096576A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Algae removing type polishing liquid |
| CN101511538A (en) * | 2006-09-15 | 2009-08-19 | 日立化成工业株式会社 | CMP polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution |
| US8314028B2 (en) * | 2006-09-28 | 2012-11-20 | Samsung Electronics Co., Ltd. | Slurry compositions and methods of polishing a layer using the slurry compositions |
| CN106566412A (en) * | 2015-09-25 | 2017-04-19 | 气体产品与化学公司 | Stop-on silicon containing layer additive |
Non-Patent Citations (1)
| Title |
|---|
| 《Effects of Nonionic Surfactants on Oxide-to-Polysilicon Selectivity during Chemical Mechanical Polishing》;Jae-Dong Lee, et al.;《Journal of The Electrochemical Society》;20020831;第149卷(第8期);第G477页右栏第3段和第G478页表1和图1 * |
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