CN108562980B - A kind of production method of the fiber transverse plane coupler for microstrip probe - Google Patents
A kind of production method of the fiber transverse plane coupler for microstrip probe Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
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- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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Abstract
一种用于微带探针的光纤端面耦合器的制作方法,包括以下步骤:(1)通过热氧化法在硅晶片上生成氧化物层;(2)在步骤(1)的氧化物层上沉积一层牺牲层;(3)使用真空蒸发镀膜法,在步骤(2)的牺牲层上镀金属膜形成金属面屏;(4)在步骤(3)的金属面屏上旋转涂敷光刻胶;(5)对光刻胶进行紫外线曝光显影,形成插槽;(6)将光纤插入插槽并固定;(7)去除牺牲层,将光纤端面耦合器与硅晶片分离;(8)利用聚焦离子束刻蚀技术在金属面屏上加工出供微带探针装配的安装孔。本发明使得微带探针能够与传输光纤耦合连接,提高等离子体激元的激励能效,并大幅度降低系统调整难度,推进微带探针的实用化。
A manufacturing method of an optical fiber end-face coupler for a microstrip probe, comprising the following steps: (1) generating an oxide layer on a silicon wafer by a thermal oxidation method; (2) on the oxide layer in step (1) depositing a layer of sacrificial layer; (3) using a vacuum evaporation coating method, a metal film is plated on the sacrificial layer in step (2) to form a metal screen; (4) spin coating photolithography on the metal screen in step (3) (5) UV exposure and development of the photoresist to form a slot; (6) Insert the optical fiber into the slot and fix it; (7) Remove the sacrificial layer, and separate the optical fiber end-face coupler from the silicon wafer; (8) Use Focused ion beam etching technology produces mounting holes on the metal screen for the assembly of microstrip probes. The invention enables the microstrip probe to be coupled and connected to the transmission optical fiber, improves the excitation energy efficiency of the plasmon, greatly reduces the difficulty of system adjustment, and promotes the practical application of the microstrip probe.
Description
技术领域technical field
本发明属于基于微探针的光电检测领域,尤其涉及一种用于微带探针的光纤端面耦合器的制作方法。The invention belongs to the field of photoelectric detection based on micro-probes, and in particular relates to a manufacturing method of an optical fiber end-face coupler for micro-strip probes.
背景技术Background technique
微探针多指用于高精度光电检测领域的光学微结构探头,比如目前常用的光纤探针。光纤探针直接在光纤末端进行加工,直接与光纤相连,甚至是光纤的一部分,配合使用成熟的二极管激光系统和光纤激光器产生所需的高斯光束,组成系统十分方便,然而在光强、分辨率、探测微区尺寸等很多方面存在不足。基于金属-绝缘体-金属波导结构的微带探针是最近提出的一种新型微探针,其本质为一种基于表面等离子体激元的纳米结构,具有本地激励能效高、尺寸小、损耗低等优点。微带探针可以实现超越衍射极限分辨率的效果,因此在超分辨率成像、光通信、超高密度数据存储等领域都有很好的应用前景。微带探针一经提出,就引发了很多研究者的兴趣,对其进行了理论和实验方面的研究以验证其优越性(S.Kawata,Y.Inouye,P.Verma,Plasmonics for near-field nano-imaging andsuperlensing,2009,Nat.Photonics 3,388–394),其优点是金属-绝缘体-金属波导结构中金属化部分短,因此损耗很低;另外等离子体激励的能效高。最大的缺点是与光能的传输通道连接非常困难,无法达到实用化的目的。因此,发明一种能将微带探针与传输光纤耦合连接,且光能量耦合效率高、结构简单、易于实现的新型耦合器件是十分重要的,能有效推进微带探针的实用化,在超分辨光学系统、生物检测、光通信等领域发挥作用。Microprobes mostly refer to optical microstructure probes used in the field of high-precision photoelectric detection, such as the commonly used optical fiber probes. The fiber probe is directly processed at the end of the fiber, directly connected to the fiber, or even a part of the fiber. It is very convenient to form a system by using a mature diode laser system and a fiber laser to generate the required Gaussian beam. , detection of micro-area size and many other deficiencies. The microstrip probe based on the metal-insulator-metal waveguide structure is a recently proposed new type of microprobe, which is essentially a surface plasmon-based nanostructure with high local excitation energy efficiency, small size, and low loss. Etc. Microstrip probes can achieve resolution beyond the diffraction limit, so they have good application prospects in the fields of super-resolution imaging, optical communication, and ultra-high-density data storage. Once the microstrip probe was proposed, it aroused the interest of many researchers, and they carried out theoretical and experimental studies to verify its superiority (S. Kawata, Y. Inouye, P. Verma, Plasmonics for near-field nanometers) -imaging and superlensing, 2009, Nat. Photonics 3, 388–394), which has the advantage of short metallization in the metal-insulator-metal waveguide structure, so the losses are very low; in addition, the energy efficiency of the plasmonic excitation is high. The biggest disadvantage is that it is very difficult to connect with the transmission channel of light energy and cannot achieve practical purposes. Therefore, it is very important to invent a novel coupling device that can couple and connect the microstrip probe to the transmission fiber, and has high optical energy coupling efficiency, simple structure and easy implementation, which can effectively promote the practical application of the microstrip probe. Super-resolution optical systems, biological detection, optical communication and other fields play a role.
发明内容SUMMARY OF THE INVENTION
为了克服已有技术使用激光直接照射来激发等离子体激元存在的光学系统调整非常复杂、通用性很差、且光能耦合效率很低、无法实际应用的不足,本发明提供了一种用于微带探针的光纤端面耦合器的制作方法,使得微带探针能够与传输光纤耦合连接,提高等离子体激元的激励能效,并大幅度降低系统调整难度,推进微带探针的实用化。In order to overcome the deficiencies in the prior art that the optical system used to excite plasmons by direct laser irradiation is very complicated to adjust, has poor versatility, and has low optical energy coupling efficiency and cannot be practically applied, the present invention provides an optical system for The manufacturing method of the optical fiber end-face coupler of the microstrip probe enables the microstrip probe to be coupled and connected to the transmission optical fiber, improves the excitation energy efficiency of the plasmon, greatly reduces the difficulty of system adjustment, and promotes the practical application of the microstrip probe .
本发明解决其技术问题所采用的技术方案是:The technical scheme adopted by the present invention to solve its technical problems is:
一种用于微带探针的光纤端面耦合器的制作方法,所述制作方法包括以下步骤:A manufacturing method of an optical fiber end-face coupler for a microstrip probe, the manufacturing method comprising the following steps:
(1)通过热氧化法在硅晶片上生成氧化物层;(1) generating an oxide layer on a silicon wafer by thermal oxidation;
(2)在步骤(1)的氧化物层上沉积一层牺牲层;(2) depositing a sacrificial layer on the oxide layer of step (1);
(3)使用真空蒸发镀膜法,在步骤(2)的牺牲层上镀金属膜形成金属面屏;(3) using vacuum evaporation coating method, on the sacrificial layer of step (2), a metal film is plated to form a metal face screen;
(4)在步骤(3)的金属面屏上旋转涂敷光刻胶;(4) spin coating photoresist on the metal face screen of step (3);
(5)对光刻胶进行紫外线曝光显影,形成插槽,所述插槽的形状为圆柱形,所述插槽的直径与待插接光纤的外径相同;(5) UV exposure and development are carried out to the photoresist to form a slot, the shape of the slot is a cylindrical shape, and the diameter of the slot is the same as the outer diameter of the optical fiber to be inserted;
(6)将光纤插入插槽并固定;(6) Insert the optical fiber into the slot and fix it;
(7)去除牺牲层,将光纤端面耦合器与硅晶片分离;(7) Remove the sacrificial layer, and separate the optical fiber end-face coupler from the silicon wafer;
(8)利用聚焦离子束刻蚀技术在金属面屏上加工出供微带探针装配的安装孔。(8) Using the focused ion beam etching technology to process the mounting holes for the microstrip probe assembly on the metal screen.
进一步,所述步骤(1)中,热氧化法制备的过程为:去除硅晶片表面的自然氧化层,使用HF/H腐蚀液,将清洗过的晶片浸入腐蚀液内约1分钟后取出,用去离子水冲洗晶片表面后吹干;再放入管式真空炉并设置温度参数;将硅晶片放入管式炉中心位置,紧固炉管两侧的连接法兰,打开氧气钢瓶;启动管式炉,开始热氧化生长二氧化硅薄膜;生长结束后,取出。Further, in the step (1), the process of thermal oxidation preparation is as follows: removing the natural oxide layer on the surface of the silicon wafer, using HF/H etching solution, immersing the cleaned wafer in the etching solution for about 1 minute and taking out, using Rinse the surface of the wafer with deionized water and blow it dry; put it into the tube vacuum furnace and set the temperature parameters; put the silicon wafer into the center of the tube furnace, fasten the connecting flanges on both sides of the furnace tube, and open the oxygen cylinder; start the tube Type furnace, start thermal oxidation growth of silicon dioxide film; after the growth is completed, take out.
再进一步,所述步骤(2)的牺牲层采用电化学沉积工艺。Still further, the sacrificial layer of the step (2) adopts an electrochemical deposition process.
更进一步,所述步骤(3)采用真空镀膜方法生长金属面屏,所述金属面屏的形状为圆形。Further, in the step (3), a vacuum coating method is used to grow a metal face screen, and the shape of the metal face screen is a circle.
所述金属面屏为铝面屏,铝片熔点相对较低,采用电阻加热法加热。The metal face screen is an aluminum face screen, and the melting point of the aluminum sheet is relatively low, and is heated by a resistance heating method.
所述步骤(4)中,光刻胶为SU-8光刻胶,采用紫外光刻的方法,在SU-8光刻胶上制备插槽,使得圆柱形SU-8光刻胶的中心区域镂空但并未贯穿,此时,插槽与光纤相连,杯底外侧连接金属面屏,而金属面屏通过牺牲层和二氧化硅氧化层连接着硅基底;将牺牲层溶解,就将耦合器与硅晶片分离开来。In the step (4), the photoresist is SU-8 photoresist, and a slot is prepared on the SU-8 photoresist by means of ultraviolet lithography, so that the central area of the cylindrical SU-8 photoresist is formed. It is hollowed out but not penetrated. At this time, the slot is connected to the optical fiber, the outer side of the cup bottom is connected to the metal screen, and the metal screen is connected to the silicon substrate through the sacrificial layer and the silicon dioxide oxide layer; when the sacrificial layer is dissolved, the coupler is connected. Separated from the silicon wafer.
所述步骤(8)中,所述安装孔为方形孔,利用聚焦离子束刻蚀技术在金属面屏上加工出方形孔,所述方形孔必须贯穿铝面屏,其尺寸由微带探针的尺寸决定。In the step (8), the installation hole is a square hole, and a square hole is machined on the metal screen by using the focused ion beam etching technology. The square hole must pass through the aluminum screen, and its size is determined by the microstrip probe. size is determined.
所述步骤(5)中,所述插槽为杯状插槽,所述杯状插槽的杯底外面为光滑平面,所述光滑平面上生长一层金属薄膜,形成所述金属面屏。In the step (5), the slot is a cup-shaped slot, the outer surface of the cup bottom of the cup-shaped slot is a smooth plane, and a layer of metal film is grown on the smooth plane to form the metal face screen.
本发明的技术构思为:首先通过热氧化法和真空蒸发法,在硅晶片上生成铝面屏;接着,在铝面屏上涂敷SU-8光刻胶,利用紫外光刻制备杯状插槽;进一步,用UV胶,将插入杯状插槽的光纤固定,去除牺牲层,将光纤端面耦合器与硅晶片分离;最后,在铝面屏中加工出所设计尺寸的方形孔。The technical idea of the present invention is as follows: firstly, an aluminum panel is formed on a silicon wafer by thermal oxidation and vacuum evaporation; Further, use UV glue to fix the optical fiber inserted into the cup-shaped slot, remove the sacrificial layer, and separate the optical fiber end-face coupler from the silicon wafer; finally, a square hole of the designed size is processed in the aluminum screen.
本发明的有益效果主要表现在:(1)使微带探针像普通光纤探针那样,通过耦合器直接与光纤耦合连接,结构简单,使用方便;(2)等离子体激元的本地激励能效高;(3)微带探针金属化尺寸短,因此损耗很低;(4)方便与现有商用化的半导体激光器结合,形成大功率高斯光束,以实现其实用化,满足微带探针在超分辨光学系统、生物检测等领域中的应用。The beneficial effects of the invention are mainly manifested in: (1) the microstrip probe is directly coupled and connected to the optical fiber through a coupler like a common optical fiber probe, the structure is simple, and the use is convenient; (2) the local excitation energy efficiency of the plasmon (3) The metallization size of the microstrip probe is short, so the loss is very low; (4) It is convenient to combine with the existing commercial semiconductor lasers to form a high-power Gaussian beam, so as to realize its practical application and meet the requirements of the microstrip probe. Applications in super-resolution optical systems, biological detection and other fields.
附图说明Description of drawings
图1是光纤端面耦合器的三维结构示意图,其中,1代表光纤,2代表杯状插槽,3代表金属面屏,4代表金属面屏上的方形孔。Figure 1 is a schematic diagram of the three-dimensional structure of an optical fiber end-face coupler, wherein 1 represents an optical fiber, 2 represents a cup-shaped slot, 3 represents a metal screen, and 4 represents a square hole on the metal screen.
图2是光纤端面耦合器结构设计示意图,其中,(a)是插入光纤侧的视图、(b)是插入微带探针侧的视图、(c)是光纤端面耦合器的俯视图,d1表示杯状插槽的内径,d2表示杯状插槽的外径;a表示金属面屏上方形孔的长,u表示金属面屏上方形孔的宽;L1表示嵌入杯状插槽的光纤长度,L2表示杯状插槽的杯体总长度,L3表示金属面屏的厚度,L4表示杯状插槽的杯底厚度,L5、t和b分别代表微带探针的长度、金属层的厚度和绝缘体的厚度。Figure 2 is a schematic diagram of the structural design of the optical fiber end-face coupler, wherein (a) is a view on the side where the optical fiber is inserted, (b) is a view on the side where the microstrip probe is inserted, (c) is a top view of the optical fiber end-face coupler, and d 1 represents The inner diameter of the cup-shaped slot, d 2 represents the outer diameter of the cup-shaped slot; a represents the length of the square hole on the metal panel, u represents the width of the square hole on the metal panel; L 1 represents the optical fiber embedded in the cup-shaped slot Length, L 2 represents the total length of the cup body of the cup slot, L 3 represents the thickness of the metal face screen, L 4 represents the cup bottom thickness of the cup slot, L 5 , t and b represent the length of the microstrip probe respectively , the thickness of the metal layer and the thickness of the insulator.
图3是制作步骤(3)沉积得到的铝面屏示意图,其中,5代表硅基底,6代表氧化层和牺牲层。FIG. 3 is a schematic diagram of the aluminum panel deposited in the manufacturing step (3), wherein 5 represents a silicon substrate, and 6 represents an oxide layer and a sacrificial layer.
图4是制作步骤(4)旋涂生成SU-8光刻胶结构示意图,其中,5代表硅基底,6代表氧化层和牺牲层。4 is a schematic diagram of the structure of the SU-8 photoresist produced by spin coating in the manufacturing step (4), wherein 5 represents a silicon substrate, and 6 represents an oxide layer and a sacrificial layer.
图5是制作步骤(5)紫外光刻后形成的杯状插槽示意图,其中,5代表硅基底,6代表氧化层和牺牲层。FIG. 5 is a schematic diagram of a cup-shaped socket formed after ultraviolet photolithography in the manufacturing step (5), wherein 5 represents a silicon substrate, and 6 represents an oxide layer and a sacrificial layer.
图6是制作步骤(6)利用UV胶固定光纤后的结构示意图,其中,5代表硅基底,6代表氧化层和牺牲层。FIG. 6 is a schematic view of the structure after the optical fiber is fixed by UV glue in the manufacturing step (6), wherein 5 represents a silicon substrate, and 6 represents an oxide layer and a sacrificial layer.
图7是制作步骤(7)光纤端面耦合器与硅晶片分离的示意图,其中,5代表硅基底,6代表氧化层和牺牲层。FIG. 7 is a schematic diagram of the separation of the optical fiber end-face coupler from the silicon wafer in the manufacturing step (7), wherein 5 represents the silicon substrate, and 6 represents the oxide layer and the sacrificial layer.
具体实施方式Detailed ways
下面结合附图对本发明作进一步描述。The present invention will be further described below in conjunction with the accompanying drawings.
参照图1~图7,一种用于微带探针的光纤端面耦合器的制作方法,其杯状插槽的材料为光塑性的环氧型SU-8光刻胶、金属薄膜的材料为铝材料,制作方法包括以下步骤:1 to 7 , a method for manufacturing an optical fiber end-face coupler for a microstrip probe, the material of the cup-shaped slot is photoplastic epoxy type SU-8 photoresist, and the material of the metal film is Aluminum material, the manufacturing method includes the following steps:
(1)通过热氧化法在硅晶片上生成氧化物层;(1) generating an oxide layer on a silicon wafer by thermal oxidation;
(2)在步骤(1)的氧化物层上沉积一层牺牲层;(2) depositing a sacrificial layer on the oxide layer of step (1);
(3)使用真空蒸发镀膜法,在步骤(2)的牺牲层上镀铝膜形成铝面屏;(3) using vacuum evaporation coating method, on the sacrificial layer of step (2), aluminized film is formed to form an aluminum face screen;
(4)在步骤(3)的铝面屏上旋转涂敷SU-8光刻胶;(4) spin coating SU-8 photoresist on the aluminum face screen of step (3);
(5)对SU-8光刻胶进行紫外线曝光显影,形成插槽,所述插槽的形状为圆柱形,所述插槽的直径与待插接光纤的外径相同;(5) SU-8 photoresist is subjected to ultraviolet exposure and development to form a slot, the shape of the slot is a cylindrical shape, and the diameter of the slot is the same as the outer diameter of the optical fiber to be inserted;
(6)将光纤插入插槽并使用UV胶固定;(6) Insert the optical fiber into the slot and fix it with UV glue;
(7)去除牺牲层,将光纤端面耦合器与硅晶片分离;(7) Remove the sacrificial layer, and separate the optical fiber end-face coupler from the silicon wafer;
(8)利用聚焦离子束刻蚀技术在铝面屏上加工出所设计尺寸的供微带探针装配的安装孔。(8) Using the focused ion beam etching technology, the designed size of the mounting hole for the microstrip probe to be assembled is machined on the aluminum panel.
所述步骤(1)中,热氧化法制备的二氧化硅薄膜结构致密、均匀性和重复性好。具体步骤:去除硅晶片表面的自然氧化层,使用HF/H腐蚀液,将清洗过的晶片浸入腐蚀液内约1分钟后取出,用去离子水冲洗晶片表面后吹干;再放入管式真空炉并设置温度参数。将硅晶片放入管式炉中心位置,紧固炉管两侧的连接法兰,打开氧气钢瓶。启动管式炉,开始热氧化生长二氧化硅薄膜;生长结束后,取出。In the step (1), the silicon dioxide thin film prepared by the thermal oxidation method has a compact structure, good uniformity and repeatability. Specific steps: remove the natural oxide layer on the surface of the silicon wafer, use HF/H etching solution, immerse the cleaned wafer in the etching solution for about 1 minute, take it out, rinse the wafer surface with deionized water and blow dry; Vacuum furnace and set temperature parameters. Put the silicon wafer into the center of the tube furnace, fasten the connecting flanges on both sides of the furnace tube, and open the oxygen cylinder. Start the tube furnace and start the thermal oxidation growth of the silicon dioxide film; after the growth is completed, take it out.
所述步骤(2)的牺牲层采用电化学沉积工艺。The sacrificial layer in the step (2) adopts an electrochemical deposition process.
所述步骤(3)采用真空镀膜方法生长铝面屏,铝面屏的形状为圆形,铝片熔点相对较低,采用电阻加热法加热。In the step (3), a vacuum coating method is used to grow the aluminum face screen, the shape of the aluminum face screen is a circle, the melting point of the aluminum sheet is relatively low, and the resistance heating method is used for heating.
所述步骤(4)采用紫外光刻的方法,在SU-8光刻胶上制备杯形插槽,使得圆柱形SU-8光刻胶的中心区域镂空但并未贯穿,类似杯子的形状。所述杯形插槽的作用是使光纤能够插入其中并使用UV胶固定住。此时,杯形插槽与光纤相连,杯底外侧连接铝面屏,而铝面屏通过牺牲层和二氧化硅氧化层连接着硅基底。将牺牲层溶解,就将耦合器与硅晶片分离开来。In the step (4), a method of ultraviolet photolithography is used to prepare a cup-shaped slot on the SU-8 photoresist, so that the central area of the cylindrical SU-8 photoresist is hollowed out but not penetrated, similar to the shape of a cup. The purpose of the cup-shaped slot is to allow the optical fiber to be inserted into it and held in place with UV glue. At this time, the cup-shaped slot is connected to the optical fiber, the outer side of the cup bottom is connected to the aluminum panel, and the aluminum panel is connected to the silicon substrate through the sacrificial layer and the silicon dioxide oxide layer. Dissolving the sacrificial layer separates the coupler from the silicon wafer.
所述步骤(8)中,所述安装孔为方形孔,利用聚焦离子束刻蚀技术在铝面屏上加工出方形孔,所述方形孔必须贯穿铝面屏,其尺寸由微带探针的尺寸决定,目的是使微带探针能够直接插入方形孔中。In the step (8), the installation hole is a square hole, and a square hole is processed on the aluminum panel by using the focused ion beam etching technology. The square hole must pass through the aluminum panel, and its size is determined by the microstrip probe. The size of the microstrip probe is determined so that the microstrip probe can be inserted directly into the square hole.
所述步骤(5)中,所述插槽为杯状插槽,所述杯状插槽的杯底外面为光滑平面,所述光滑平面上生长一层金属薄膜,形成所述金属面屏。In the step (5), the slot is a cup-shaped slot, the outer surface of the cup bottom of the cup-shaped slot is a smooth plane, and a layer of metal film is grown on the smooth plane to form the metal face screen.
本实施例的用于微带探针的光纤端面耦合器由金属面屏3和一个杯状插槽2构成。所述杯状插槽2的形状为圆柱形,其直径与光纤1的外径相同,所述光纤1插入杯状插槽2,使其恰好嵌入杯状插2槽中。所述杯状插槽2的杯底外面为光滑平面,所述光滑平面上生长一层金属薄膜,形成所述金属面屏3。所述金属面屏的中心开一个方形孔4,所述方形孔4贯穿整个金属薄膜。所述光纤1、金属面屏3、杯状插槽2、微带探针必须处在同一光轴上。The optical fiber end-face coupler for the microstrip probe in this embodiment is composed of a metal screen 3 and a cup-shaped slot 2 . The shape of the cup-shaped slot 2 is cylindrical, and its diameter is the same as the outer diameter of the optical fiber 1 . The outer surface of the cup bottom of the cup-shaped slot 2 is a smooth plane, and a layer of metal film is grown on the smooth plane to form the metal screen 3 . A square hole 4 is opened in the center of the metal face screen, and the square hole 4 penetrates the entire metal film. The optical fiber 1, the metal screen 3, the cup-shaped slot 2, and the microstrip probe must be on the same optical axis.
所述杯状插槽2的材料优选为光塑性的环氧型SU-8光刻胶。The material of the cup-shaped socket 2 is preferably a photoplastic epoxy type SU-8 photoresist.
所述金属薄膜的材料优选为铝材料。The material of the metal thin film is preferably an aluminum material.
所述金属面屏3上的方形孔4,是为了固定微带探针。所述金属面屏是用来抑制背景辐射,抑制背景辐射的目的是为了减少微带探针扫描探测时的背景辐射干扰,增大其探测精确度。The square hole 4 on the metal screen 3 is for fixing the microstrip probe. The metal screen is used to suppress the background radiation, and the purpose of suppressing the background radiation is to reduce the interference of the background radiation during the scanning detection of the microstrip probe and increase the detection accuracy.
所述方形孔4的尺寸由所述微带探针的尺寸决定,同时,所述金属面屏上的方形孔的尺寸使得只有TE10模能够在方形孔中传播。The size of the square hole 4 is determined by the size of the microstrip probe, and at the same time, the size of the square hole on the metal faceplate is such that only the TE 10 mode can propagate in the square hole.
所述杯状插槽1的尺寸由与微带探针耦合连接的光纤的尺寸决定,须使得杯状插槽恰好能够固定住光纤,而所述杯状插槽的杯底的外侧平面与带有方形孔的金属面屏相接,所述方形孔固定住微带探针,总体效果是使微带探针与光纤耦合相连。The size of the cup-shaped slot 1 is determined by the size of the optical fiber coupled with the microstrip probe, so that the cup-shaped slot can just fix the optical fiber, and the outer plane of the cup bottom of the cup-shaped slot is in line with the tape. Metal face screens with square holes are connected, and the square holes fix the microstrip probe, and the overall effect is to couple and connect the microstrip probe to the optical fiber.
所述微带探针的结构尺寸、金属薄膜的厚度、金属面屏上方形孔4的尺寸由下列公式计算得出:The structure size of the microstrip probe, the thickness of the metal film, and the size of the square hole 4 on the metal screen are calculated by the following formulas:
其中:in:
w=b/2,u=b/2+tw=b/2, u=b/2+t
其中,γ是复传播常数,ω是电磁波的角频率,εd代表二氧化硅材料的介电常数、εm代表铝材料的介电常数、εa代表空气的介电常数,b代表微带探针中绝缘体的厚度,t代表微带探针中金属层的厚度,h代表磁场强度函数,ceff_1代表能量传递函数,P和P0分别是金属面屏前后的辐射能流。Among them, γ is the complex propagation constant, ω is the angular frequency of the electromagnetic wave, ε d represents the dielectric constant of silicon dioxide material, ε m represents the dielectric constant of aluminum material, ε a represents the dielectric constant of air, b represents the microstrip The thickness of the insulator in the probe, t is the thickness of the metal layer in the microstrip probe, h is the magnetic field strength function, c eff_1 is the energy transfer function, and P and P 0 are the radiant energy flow before and after the metal screen, respectively.
进一步地,所述光能量通过光纤传输进入光纤端面耦合器,并通过端面耦合的方法激发出微带探针结构的等离子体。Further, the optical energy is transmitted into the optical fiber end-face coupler through the optical fiber, and the plasma of the microstrip probe structure is excited by the method of end-face coupling.
本实施例的用于微带探针的光纤端面耦合器由铝面屏和一个光塑性的SU-8光刻胶材料杯状插槽构成。所述杯状插槽的形状为圆柱形,其直径d1与光纤的外径相同,所述光纤插入杯状插槽,使其恰好嵌入杯状插槽中。所述杯状插槽的杯底外面为光滑平面,所述光滑平面上生长一层金属铝薄膜,形成所述铝面屏。光塑性SU-8光刻胶杯状插槽的外径d2与铝面屏的直径相等,因此SU-8光刻胶杯状插槽的底面与铝面屏重合。铝面屏的中心处有一个贯穿的方形孔,所述铝面屏上的方形孔,是为了固定微带探针,方形孔的长度a等于微带探针的宽度,方形孔的宽度u等于微带探针中绝缘体的厚度b,在实际使用中微带探针能够直接插入铝面屏。光纤、铝面屏、SU-8材料杯状插槽、微带探针必须处在同一光轴上,保证光纤通过端面耦合器直接与微带探针连接。同时由光纤入射的激光,通过端面耦合的方式在微带探针上激发出等离子体。The optical fiber end-face coupler used for the microstrip probe in this embodiment is composed of an aluminum screen and a cup-shaped slot made of photoplastic SU-8 photoresist material. The shape of the cup-shaped slot is cylindrical, the diameter d 1 of which is the same as the outer diameter of the optical fiber, and the optical fiber is inserted into the cup-shaped slot so that it is just inserted into the cup-shaped slot. The outer surface of the cup bottom of the cup-shaped slot is a smooth plane, and a layer of metal aluminum film is grown on the smooth plane to form the aluminum surface screen. The outer diameter d2 of the photoplastic SU-8 photoresist cup-shaped slot is equal to the diameter of the aluminum face screen, so the bottom surface of the SU-8 photoresist cup-shaped slot coincides with the aluminum face screen. There is a square hole running through the center of the aluminum screen. The square hole on the aluminum screen is for fixing the microstrip probe. The length a of the square hole is equal to the width of the microstrip probe, and the width u of the square hole is equal to The thickness b of the insulator in the microstrip probe, the microstrip probe can be directly inserted into the aluminum screen in actual use. Optical fiber, aluminum screen, SU-8 material cup-shaped slot, and microstrip probe must be on the same optical axis to ensure that the optical fiber is directly connected to the microstrip probe through the end-face coupler. At the same time, the laser incident from the fiber excites the plasma on the microstrip probe by means of end-face coupling.
所述铝面屏是用来抑制背景辐射,抑制背景辐射的目的是为了减少微带探针扫描探测时的背景辐射干扰,增大其探测精确度。所述方形孔的尺寸由所述微带探针的尺寸决定,同时,所述铝面屏上的方形孔的尺寸使得只有TE10模能够在方形孔中传播。所述微带探针的结构尺寸、铝面屏的厚度、铝面屏上方形孔的尺寸由下列公式计算得出:The aluminum surface screen is used to suppress background radiation, and the purpose of suppressing background radiation is to reduce the interference of background radiation during scanning and detection of the microstrip probe and increase the detection accuracy. The size of the square hole is determined by the size of the microstrip probe, while the size of the square hole on the aluminum faceplate is such that only the TE 10 mode can propagate in the square hole. The structure size of the microstrip probe, the thickness of the aluminum face screen, and the size of the square hole on the aluminum face screen are calculated by the following formulas:
其中:in:
w=b/2,u=b/2+tw=b/2, u=b/2+t
其中,γ是复传播常数,ω是电磁波的角频率,εd代表二氧化硅材料的介电常数、εm代表铝材料的介电常数、εa代表空气的介电常数,b代表微带探针中绝缘体的厚度,t代表微带探针中金属层的厚度,h代表磁场强度函数,ceff_1代表能量传递函数,P和P0分别是铝面屏前后的辐射能流。Among them, γ is the complex propagation constant, ω is the angular frequency of the electromagnetic wave, ε d represents the dielectric constant of silicon dioxide material, ε m represents the dielectric constant of aluminum material, ε a represents the dielectric constant of air, b represents the microstrip The thickness of the insulator in the probe, t is the thickness of the metal layer in the microstrip probe, h is the magnetic field strength function, c eff_1 is the energy transfer function, and P and P 0 are the radiant energy flow before and after the aluminum screen, respectively.
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