CN106997918A - A kind of LED chip front pad structure - Google Patents

Abstract

The invention provides a kind of LED chip front pad structure, belong to LED field, including the body being made up of the P poles conductive metal layer stacked gradually, P poles crystalline substrate, N poles crystalline substrate and N poles conductive metal layer, N poles conductive metal layer is connected with N poles pin, P poles conductive metal layer is connected with P poles pin, and N poles conductive metal layer is provided with the bar shaped eutectic welding zone for being used for being connected with N poles pin.Compared with prior art, the LED chip front pad structure increases bonding pad area by setting bar shaped welding zone in LED chip, reduces manufacturing cost, while not influenceing the luminous of LED chip.

Description

A LED chip front pad structure

technical field

The invention relates to the field of LEDs, in particular to a front pad structure of an LED chip.

Background technique

The existing LED chip structure is generally connected to the N-pole pin through a gold wire, and the connection between the gold wire and the LED chip needs to be done through a pad. Since the end of the gold wire is small, the LED chip is usually set as a spot weld. However, the area of the dot-shaped pad is very small, and problems such as off-line often occur. In addition, the manufacture of the dot-shaped pad is difficult and the manufacturing process is cumbersome, resulting in increased manufacturing costs.

Contents of the invention

In view of the above problems, the present invention provides a pad structure on the front side of an LED chip, in which a strip-shaped pad is provided on the LED chip without affecting the light emission of the LED chip, increasing the area of the pad, and reducing the manufacturing cost.

The technical scheme adopted in the present invention is:

A pad structure on the front side of an LED chip, comprising a body composed of sequentially stacked P-pole conductive metal layers, P-pole crystalline substrates, N-pole crystalline substrates, and N-pole conductive metal layers, the N-pole conductive metal layer is connected to an N-pole The P pole conductive metal layer is connected to the P pole pin, and the N pole conductive metal layer is provided with a strip-shaped eutectic welding area for connecting with the N pole pin.

Preferably, the strip-shaped eutectic welding zone is one strip.

Preferably, there are two strip-shaped eutectic soldering regions, which are respectively arranged on a pair of edge positions of the N-pole conductive metal layer.

Preferably, there are four strip-shaped eutectic welding areas, which are arranged around the edge positions around the N-pole conductive metal layer.

Preferably, the strip-shaped eutectic welding area is welded with a metal sheet for connecting with the N-pole pin.

Compared with the prior art, the beneficial effect of the present invention is that: the present invention provides a pad structure on the front side of the LED chip. By setting the strip-shaped pads on the LED chip, the area of the pad is increased and the manufacturing cost is reduced without affecting the Lighting of LED chips.

Description of drawings

Fig. 1 is the schematic diagram of a kind of LED chip front pad structure provided by the present invention;

Fig. 2 is a schematic diagram of a first embodiment of a front pad structure of an LED chip provided by the present invention;

Fig. 3 is a schematic diagram of a second embodiment of an LED chip front pad structure provided by the present invention;

Fig. 4 is a schematic diagram of a third embodiment of a front pad structure of an LED chip provided by the present invention.

detailed description

The preferred embodiments provided by the present invention will be specifically described according to the accompanying drawings.

FIG. 1 to FIG. 4 are preferred embodiments of a front pad structure of an LED chip provided by the present invention. As shown in FIG. 1 , the front pad structure of the LED chip includes a body 10 composed of a P-pole conductive metal layer 11 , a P-pole crystalline substrate 12 , an N-pole crystalline substrate 13 and an N-pole conductive metal layer 14 stacked in sequence. The N-pole conductive metal layer 14 is connected with the N-pole pin 20, the P-pole conductive metal layer 11 is connected with the P-pole pin 30, and the N-pole conductive metal layer 14 is provided with a pin for connecting with the N-pole pin 20. Strip-shaped eutectic welding zone 141, described strip-shaped eutectic welding zone 141 is welded with the metal sheet 40 that is used to be connected with N pole pin 20, welds metal sheet 40 through strip-shaped eutectic welding zone 141 like this, increases pad area, reducing the manufacturing cost without affecting the light emission of the LED chip.

As a first preferred implementation manner, as shown in FIG. 2 , the strip-shaped eutectic welding area 141A is one, preferably disposed in the middle of the N-pole conductive metal layer 14 .

As a second preferred implementation manner, as shown in FIG. 3 , there are two strip-shaped eutectic welding regions 141B, which are respectively arranged on a pair of edge positions of the N-pole conductive metal layer 14 .

As a third preferred implementation manner, as shown in FIG. 4 , there are four strip-shaped eutectic welding regions 141C, which are arranged around the edges of the N-pole conductive metal layer 14 .

In summary, the technical solution of the present invention can fully and effectively realize the above-mentioned purpose of the invention, and the structure and functional principles of the present invention have been fully verified in the embodiments, and can achieve the expected effect and purpose without departing from the present invention. On the premise of keeping the principle and essence of the invention, various changes or modifications can be made to the embodiments of the invention. Therefore, the present invention includes all replacements within the scope mentioned in the scope of the patent application, and any equivalent changes made within the scope of the patent application for the present invention fall within the scope of the patent application of this case.

Claims (5)

1. A front pad structure of an LED chip, comprising a body composed of successively stacked P-pole conductive metal layers, P-pole crystalline substrates, N-pole crystalline substrates and N-pole conductive metal layers, the N-pole conductive metal layer is connected with The N-pole pin, the P-pole conductive metal layer is connected to the P-pole pin, and it is characterized in that the N-pole conductive metal layer is provided with a strip-shaped eutectic welding area for connecting with the N-pole pin. 2. The bonding pad structure on the front side of the LED chip according to claim 1, wherein the strip-shaped eutectic pad is one. 3. The bonding pad structure on the front side of the LED chip according to claim 1, wherein there are two strip-shaped eutectic pads, which are respectively arranged on a pair of edge positions of the N-pole conductive metal layer. 4. The bonding pad structure on the front side of the LED chip according to claim 1, wherein there are four strip-shaped eutectic pads arranged around the edge positions around the N-pole conductive metal layer. 5. The bonding pad structure on the front side of the LED chip according to any one of claims 1 to 4, characterized in that: the strip-shaped eutectic pad is welded with a metal sheet for connecting to the N-pole pin.