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Wang et al., 2012 - Google Patents

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Wang et al., 2012

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Document ID
17809819542299318076
Author
Wang W
Leung K
Fong W
Wang S
Hui Y
Lau S
Chen Z
Shi L
Cao C
Surya C
Publication year
Publication venue
Journal of Applied physics

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We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect …
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