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Yang et al., 2019 - Google Patents

Enhanced stability in Zr-doped ZnO TFTs with minor influence on mobility by atomic layer deposition

Yang et al., 2019

Document ID
15396480184820040444
Author
Yang J
Zhang Y
Qin C
Ding X
Zhang J
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

We developed a novel method to fabricate Zr-doped ZnO (ZrZnO) thin films via low- temperature atomic layer deposition technique. ZrZnO films were deposited by diethylzinc (DEZ)/tetrakiszirconium (TDMAZr)/H 2 O cycles instead of the traditional DEZ/H 2 …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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