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Shao et al., 2018 - Google Patents

Homo-junction bottom-gate amorphous In–Ga–Zn–O TFTs with metal-induced source/drain regions

Shao et al., 2018

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Document ID
14662640416317032965
Author
Shao Y
Zhou X
Yang H
Chang B
Liang T
Wang Y
Zhang S
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Snippet

A fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a- IGZO) thin-film transistors (TFTs) is proposed, in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then …
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