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Ma et al., 2018 - Google Patents

High efficiency graphene/MoS2/Si Schottky barrier solar cells using layer-controlled MoS2 films

Ma et al., 2018

Document ID
13082739897521230491
Author
Ma J
Bai H
Zhao W
Yuan Y
Zhang K
Publication year
Publication venue
Solar Energy

External Links

Snippet

The isolation of two-dimensional (2D) materials and the possibility to assemblage as a vertical heterostructure have significantly promoted the development of ultrathin and flexible devices. Here, we demonstrate the fabrication of high efficiency graphene/MoS 2/Si Schottky …
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    • Y02E10/54Material technologies
    • Y02E10/543Solar cells from Group II-VI materials
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
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    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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