A recent observation of the in-plane anomalous Hall effect in the magnetic Weyl semimetal ${\mathrm{EuCd}}_2{\mathrm{Sb}}_2$ has drawn attention to out-of-plane orbital magnetization induced by an in-plane field component. Here, we study ${\mathrm{EuZn}}_2{\mathrm{Sb}}_2$, a sister compound of ${\mathrm{EuCd}}_2{\mathrm{Sb}}_2$, to demonstrate sensitive changes of the in-plane anomalous Hall effect on the band modulation. The Hall resistivity measured with rotating the magnetic field within the (001) principal plane of ${\mathrm{EuZn}}_2{\mathrm{Sb}}_2$ films exhibits a clear threefold component corresponding to the in-plane anomalous Hall effect, which is distinct from the twofold component of the planar Hall effect. The in-plane anomalous Hall effect of ${\mathrm{EuZn}}_2{\mathrm{Sb}}_2$ is highly contrasting to ${\mathrm{EuCd}}_2{\mathrm{Sb}}_2$, especially in terms of its opposite sign and field dependence, which can be explained by model calculations with different band inversion parameters. Our results pave the way for systematically controlling the in-plane anomalous Hall effect and orbital magnetization through elaborate band engineering.

• Hall effect
• Magnetotransport
• Magnetic thin films
• Molecular beam epitaxy