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    Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

    J. Houel1, A. V. Kuhlmann1, L. Greuter1, F. Xue1, M. Poggio1, B. D. Gerardot2, P. A. Dalgarno2, A. Badolato3, P. M. Petroff4 et al.

    A. Ludwig1,5, D. Reuter5, A. D. Wieck5, and R. J. Warburton1

    • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
    • 2School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
    • 3Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
    • 4Materials Department, University of California, Santa Barbara, California 93106, USA
    • 5Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

    Phys. Rev. Lett. 108, 107401 – Published 5 March, 2012Erratum Phys. Rev. Lett. 108, 119902 (2012)

    DOI: https://doi.org/10.1103/PhysRevLett.108.107401

    Abstract

    We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

    Corrections

    6 March, 2012

    Erratum

    Publisher’s Note: Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot [Phys. Rev. Lett. 108, 107401 (2012)]

    J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton
    Phys. Rev. Lett. 108, 119902 (2012)

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